Issued Patents All Time
Showing 1–25 of 41 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11486843 | Dryness/wetness responsive sensor | Jin Kawakita, Akihiko OHI, Tomoko OHKI, Naoki IKEDA, Toyohiro Chikyo | 2022-11-01 |
| 10290802 | Variable resistance device and method for manufacturing same | Tadaaki Nagao | 2019-05-14 |
| 10267756 | Dryness/wetness responsive sensor having first and second wires spaced 5 nm to less than 20 μm apart | Jin Kawakita, Tadashi Shinohara, Toyohiro Chikyo, Akihiko OHI, Tomoko OHKI | 2019-04-23 |
| 9825180 | Thin-film transistor and method for manufacturing same | Kazuhito Tsukagoshi, Shinya Aikawa, Toyohiro Chikyo | 2017-11-21 |
| 9741864 | Thin-film transistor and method for manufacturing same | Kazuhito Tsukagoshi, Shinya Aikawa | 2017-08-22 |
| 8759925 | Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide film | Naoto Umezawa, Toyohiro Chikyo | 2014-06-24 |
| 8575038 | Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide film | Naoto Umezawa, Toyohiro Chikyo | 2013-11-05 |
| 8207584 | Semiconductor device and manufacturing method of the same | Kunihiko Iwamoto, Yuuichi Kamimuta | 2012-06-26 |
| 8168547 | Manufacturing method of semiconductor device | — | 2012-05-01 |
| 7820503 | Semiconductor device and manufacturing method of the same | Masaru Kadoshima, Hiroyuki Takaba | 2010-10-26 |
| 7790627 | Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film | Kunihiko Iwamoto, Koji Tominaga, Tetsuji Yasuda | 2010-09-07 |
| 7772678 | Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygen | Kunihiko Iwamoto, Koji Tominaga, Tomoaki Nishimura | 2010-08-10 |
| 7618855 | Manufacturing method of semiconductor device | Masaru Kadoshima | 2009-11-17 |
| 7586755 | Electronic circuit component | Toshiya Satoh, Masahiko Ogino, Takao Miwa, Takashi Naitou, Takashi Namekawa +1 more | 2009-09-08 |
| 7511338 | Semiconductor device and manufacturing method of the same | Masaru Kadoshima, Hiroyuki Takaba | 2009-03-31 |
| 7482234 | Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere | Kunihiko Iwamoto, Koji Tominaga, Tomoaki Nishimura | 2009-01-27 |
| 7419920 | Metal thin film and semiconductor comprising a metal thin film | Koji Tominaga, Kunihiko Iwamoto | 2008-09-02 |
| 7397094 | Semiconductor device and manufacturing method thereof | Akira Toriumi, Tsuyoshi Horikawa, Kunihiko Iwamoto, Koji Tominaga | 2008-07-08 |
| 7387686 | Film formation apparatus | Kunihiko Iwamoto, Koji Tominaga, Tetsuji Yasuda | 2008-06-17 |
| 7372112 | Semiconductor device, process for producing the same and process for producing metal compound thin film | Kunihiko Iwamoto, Koji Tominaga, Tetsuji Yasuda | 2008-05-13 |
| 7323381 | Semiconductor device and manufacturing method thereof | Masaru Kadoshima | 2008-01-29 |
| 7294905 | Thin film capacitor and electronic circuit component | Masahiko Ogino, Toshiya Satoh, Takao Miwa, Satoru Amou | 2007-11-13 |
| 7259058 | Fabricating method of semiconductor integrated circuits | Yasuhiro Shimamoto, Masahiko Hiratani, Yuichi Matsui, Satoshi Yamamoto, Toshio Ando +2 more | 2007-08-21 |
| 7202539 | Semiconductor device having misfet gate electrodes with and without GE or impurity and manufacturing method thereof | Masaru Kadoshima | 2007-04-10 |
| 7071053 | Method of forming capacitor with ruthenium top and bottom electrodes by MOCVD | Takaaki Suzuki, Tetsuo Fujiwara, Kazutoshi Higashiyama | 2006-07-04 |