TN

Toshihide Nabatame

HI Hitachi: 14 patents #2,889 of 28,497Top 15%
RT Renesas Technology: 14 patents #133 of 3,337Top 4%
Rohm Co.: 8 patents #378 of 2,292Top 20%
NS National Institute For Materials Science: 7 patents #42 of 901Top 5%
HO Horiba: 5 patents #86 of 604Top 15%
RE Renesas Electronics: 3 patents #1,322 of 4,529Top 30%
TL Tokyo Electron Limited: 2 patents #2,602 of 5,567Top 50%
IC International Superconductivity Technology Center: 1 patents #110 of 245Top 45%
TU Tohoku University: 1 patents #615 of 1,680Top 40%
📍 Tsukuba, JP: #46 of 2,818 inventorsTop 2%
Overall (All Time): #76,285 of 4,157,543Top 2%
41
Patents All Time

Issued Patents All Time

Showing 26–41 of 41 patents

Patent #TitleCo-InventorsDate
6992022 Fabrication method for semiconductor integrated devices Yasuhiro Shimamoto, Masahiko Hiratani, Yuichi Matsui 2006-01-31
6989304 Method for manufacturing a ruthenium film for a semiconductor device Yuichi Matsui, Masahiko Hiratani, Yasuhiro Shimamoto 2006-01-24
6917065 Ferroelectric capacitor and semiconductor device Tetsuo Fujiwara, Takaaki Suzuki, Kazutoshi Higashiyama 2005-07-12
6821845 Semiconductor device and method for manufacturing the same Takaaki Suzuki, Tetsuo Fujiwara, Kazutoshi Higashiyama 2004-11-23
6777248 Dielectric element and manufacturing method therefor Takaaki Suzuki, Kazutoshi Higashiyama, Tomoji Oishi 2004-08-17
6743739 Fabrication method for semiconductor integrated devices Yasuhiro Shimamoto, Masahiko Hiratani, Yuichi Matsui 2004-06-01
6555429 Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device Yuichi Matsui, Masahiko Hiratani, Yasuhiro Shimamoto, Yoshitaka Nakamura 2003-04-29
6548342 Method of producing oxide dielectric element, and memory and semiconductor device using the element Takaaki Suzuki, Kazutoshi Higashiyama 2003-04-15
6521494 Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device Yuichi Matsui, Masahiko Hiratani, Yasuhiro Shimamoto, Yoshitaka Nakamura 2003-02-18
6503791 Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device Yuichi Matsui, Masahiko Hiratani, Yasuhiro Shimamoto, Yoshitaka Nakamura 2003-01-07
6483167 Semiconductor device and production method thereof Masaru Kadoshima, Takaaki Suzuki, Tetsuo Fujiwara, Seiji Watahiki, Yasuhiko Murata +1 more 2002-11-19
6483143 Semiconductor device having a capacitor structure including a self-alignment deposition preventing film Yuichi Matsui, Masahiko Hiratani, Yasuhiro Shimamoto, Yoshitaka Nakamura 2002-11-19
6198119 Ferroelectric element and method of producing the same Takaaki Suzuki, Tomoji Oishi, Ken Takahashi, Kunihiro Maeda 2001-03-06
5849670 Thallium group superconducting wire Junichi Kawashima, Izumi Hirabayashi, Yuh Shiobara, Shoji Tanaka 1998-12-15
5318948 Oxide superconductor, superconducting wire and coil using the same and method of production thereof Michiya Okada, Ryou Nishiwaki, Yoshihide Wadayama, Toshimi Matsumoto, Katsuzo Aihara +4 more 1994-06-07
4848983 Catalytic coal gasification by utilizing chlorides Akira Tomita, Yasuo Ohtsuka, Takayuki Takarada 1989-07-18