Issued Patents All Time
Showing 1–25 of 39 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8106441 | Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same | Satoru Akiyama, Takao Watanabe, Yuichi Matsui | 2012-01-31 |
| 7804118 | Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same | Satoru Akiyama, Takao Watanabe, Yuichi Matsui | 2010-09-28 |
| 7800153 | Capacitive electrode having semiconductor layers with an interface of separated grain boundaries | Yuichi Matsui | 2010-09-21 |
| 7683419 | Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same | Satoru Akiyama, Takao Watanabe, Yuichi Matsui | 2010-03-23 |
| 7511327 | Capacitive electrode having semiconductor layers with an interface of separated grain boundaries | Yuichi Matsui | 2009-03-31 |
| 7408218 | Semiconductor device having plural dram memory cells and a logic circuit | Satoru Akiyama, Takao Watanabe, Yuichi Matsui | 2008-08-05 |
| 7265407 | Capacitive electrode having semiconductor layers with an interface of separated grain boundaries | Yuichi Matsui | 2007-09-04 |
| 7259058 | Fabricating method of semiconductor integrated circuits | Yasuhiro Shimamoto, Yuichi Matsui, Satoshi Yamamoto, Toshihide Nabatame, Toshio Ando +2 more | 2007-08-21 |
| 7119407 | Semiconductor device and manufacturing method thereof | Yasuhiro Shimamoto, Katsunori Obata, Kazuyoshi Torii | 2006-10-10 |
| 6992022 | Fabrication method for semiconductor integrated devices | Yasuhiro Shimamoto, Yuichi Matsui, Toshihide Nabatame | 2006-01-31 |
| 6989304 | Method for manufacturing a ruthenium film for a semiconductor device | Yuichi Matsui, Yasuhiro Shimamoto, Toshihide Nabatame | 2006-01-24 |
| 6955959 | Method of making a memory structure having a multilayered contact and a storage capacitor with a composite dielectric layer of crystalized niobium pentoxide and tantalum pentoxide films | Yuichi Matsui | 2005-10-18 |
| 6867090 | Semiconductor device and method of manufacturing thereof | Shinichiro Kimura, Tomoyuki Hamada | 2005-03-15 |
| 6833577 | Semiconductor device | Yuichi Matsui | 2004-12-21 |
| 6787451 | Semiconductor device and manufacturing method thereof | Yasuhiro Shimamoto, Katsunori Obata, Kazuyoshi Torii | 2004-09-07 |
| 6743739 | Fabrication method for semiconductor integrated devices | Yasuhiro Shimamoto, Yuichi Matsui, Toshihide Nabatame | 2004-06-01 |
| 6740901 | Production of semiconductor integrated circuit | Hiroshi Miki, Yasuhiro Shimamoto, Tomoyuki Hamada | 2004-05-25 |
| 6720603 | CAPACITOR STRUCTURE AND A SEMICONDUCTOR DEVICE WITH A FIRST METAL LAYER, A SECOND METAL SILICIDE LAYER FORMED OVER THE FIRST METAL LAYER AND A SECOND METAL LAYER FORMED OVER THE SECOND METAL SILICIDE LAYER | Shinpei Iijima, Yuzuru Ohji, Masato Kunitomo, Yuichi Matsui, Hiroyuki Ohta +1 more | 2004-04-13 |
| 6713343 | Method of forming a semiconductor device with a capacitor including a polycrystalline tantalum oxide film dielectric | Yasuhiro Sugawara, Shinpei Iijima, Yuzuru Oji, Naruhiko Nakanishi, Misuzu Kanai | 2004-03-30 |
| 6693792 | Semiconductor integrated circuits and fabricating method thereof | Yasuhiro Shimamoto, Hiroshi Miki | 2004-02-17 |
| 6664157 | Semiconductor integrated circuit device and the method of producing the same | Shinpei Iijima, Yoshitaka Nakamura, Yuichi Matsui, Naruhiko Nakanishi | 2003-12-16 |
| 6583023 | Method for making semiconductor integrated circuits | Yasuhiro Shimamoto, Hiroshi Miki | 2003-06-24 |
| 6576928 | Semiconductor device capacitor with high permittivity tantalum pentoxide/niobium pentoxide dielectric | Shinichiro Kimura, Tomoyuki Hamada | 2003-06-10 |
| 6555429 | Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device | Yuichi Matsui, Yasuhiro Shimamoto, Yoshitaka Nakamura, Toshihide Nabatame | 2003-04-29 |
| 6544834 | Method of forming a semiconductor device including a capacitor with tantalum oxide (Ta2O5) | Yasuhiro Sugawara, Shinpei Iijima, Yuzuru Oji, Naruhiko Nakanishi, Misuzu Kanai | 2003-04-08 |