SI

Shinpei Iijima

HI Hitachi: 17 patents #2,231 of 28,497Top 8%
EM Elpida Memory: 10 patents #58 of 692Top 9%
RT Renesas Technology: 3 patents #990 of 3,337Top 30%
NE Nec: 2 patents #5,510 of 14,502Top 40%
NE Nec Electronics: 2 patents #384 of 1,789Top 25%
TI Texas Instruments: 2 patents #5,248 of 12,488Top 45%
HC Hitachi Ulsi Systems Co.: 1 patents #577 of 867Top 70%
📍 Akishima, JP: #9 of 519 inventorsTop 2%
Overall (All Time): #114,005 of 4,157,543Top 3%
32
Patents All Time

Issued Patents All Time

Showing 1–25 of 32 patents

Patent #TitleCo-InventorsDate
8492814 Semiconductor device and method of manufacturing the same Hiroyuki Fujimoto 2013-07-23
8278172 Semiconductor device and method of manufacturing the same Hiroyuki Fujimoto 2012-10-02
7811895 Method of manufacturing a semiconductor device having a stacked capacitor 2010-10-12
7700942 Semiconductor device including an embedded contact plug 2010-04-20
7667257 Capacitor and process for manufacturing the same 2010-02-23
7498601 Phase-change memory device and method of manufacturing same Tsutomu Hayakawa 2009-03-03
7382014 Semiconductor device with capacitor suppressing leak current 2008-06-03
7259058 Fabricating method of semiconductor integrated circuits Yasuhiro Shimamoto, Masahiko Hiratani, Yuichi Matsui, Satoshi Yamamoto, Toshihide Nabatame +2 more 2007-08-21
7183170 Manufacturing method of semiconductor device Yoshitaka Nakamura, Tsuyoshi Kawagoe, Hiroshi Sakuma, Isamu Asano, Keiji Kuroki +1 more 2007-02-27
7074669 Semiconductor integrated circuit device with capacitor of crown structure and method of manufacturing the same Hiroshi Sakuma 2006-07-11
7071071 Method of manufacturing semiconductor device Keiji Kuroki 2006-07-04
6927439 Semiconductor memory with strongly adhesive electrode Hiroshi Moriya, Tomio Iwasaki, Hiroyuki Ohta, Isamu Asano, Yuzuru Ohji +1 more 2005-08-09
6781172 Semiconductor device with adhesion-improvement capacitor and process for producing the device Hiroshi Moriya, Tomio Iwasaki, Hiroyuki Ohta, Isamu Asano, Yuzuru Ohji +1 more 2004-08-24
6723612 Semiconductor integrated circuit device and method of manufacturing the same Hiroshi Sakuma 2004-04-20
6724034 Semiconductor integrated circuit device and manufacturing method which avoids oxidation of silicon plug during thermal treatment of capacitor insulating film Hiroshi Sakuma 2004-04-20
6720603 CAPACITOR STRUCTURE AND A SEMICONDUCTOR DEVICE WITH A FIRST METAL LAYER, A SECOND METAL SILICIDE LAYER FORMED OVER THE FIRST METAL LAYER AND A SECOND METAL LAYER FORMED OVER THE SECOND METAL SILICIDE LAYER Yuzuru Ohji, Masato Kunitomo, Masahiko Hiratani, Yuichi Matsui, Hiroyuki Ohta +1 more 2004-04-13
6713343 Method of forming a semiconductor device with a capacitor including a polycrystalline tantalum oxide film dielectric Yasuhiro Sugawara, Yuzuru Oji, Naruhiko Nakanishi, Misuzu Kanai, Masahiko Hiratani 2004-03-30
6664157 Semiconductor integrated circuit device and the method of producing the same Yoshitaka Nakamura, Masahiko Hiratani, Yuichi Matsui, Naruhiko Nakanishi 2003-12-16
6653676 Integrated circuit capacitor Robert Tsu, Isamu Asano, William R. McKee 2003-11-25
6649465 Process for manufacturing a semiconductor memory device including a memory cell selecting transistor and a capacitor with metal electrodes Satoshi Yamamoto 2003-11-18
6632721 Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains Satoshi Yamamoto, Jun Kuroda, Hiroshi Miki, Yoshihisa Fujisaki, Tadanori Yoshida +1 more 2003-10-14
6576946 Semiconductor device comprising capacitor cells, bit lines, word lines, and MOS transistors in a memory cell area over a semiconductor substrate Misuzu Kanai, Yuzuru Ohji, Takuya Fukuda, Ryouichi Furukawa, Yasuhiro Sugawara +1 more 2003-06-10
6544835 Method of forming a ruthenium film by CVD Satoshi Yamamoto 2003-04-08
6544834 Method of forming a semiconductor device including a capacitor with tantalum oxide (Ta2O5) Yasuhiro Sugawara, Yuzuru Oji, Naruhiko Nakanishi, Misuzu Kanai, Masahiko Hiratani 2003-04-08
6534375 METHOD OF FORMING A CAPACITOR IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING A METAL SILICON NITRIDE LAYER TO PROTECT AN UNDERLYING METAL SILICIDE LAYER FROM OXIDATION DURING SUBSEQUENT PROCESSING STEPS Yuzuru Ohji, Masato Kunitomo, Masahiko Hiratani, Yuichi Matsui, Hiroyuki Ohta +1 more 2003-03-18