Issued Patents All Time
Showing 25 most recent of 39 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8890107 | Semiconductor memory | Nozomu Matsuzaki, Norikatsu Takaura, Naoki Yamamoto, Hideyuki Matsuoka, Tomio Iwasaki | 2014-11-18 |
| 8866120 | Semiconductor memory | Nozomu Matsuzaki, Norikatsu Takaura, Naoki Yamamoto, Hideyuki Matsuoka, Tomio Iwasaki | 2014-10-21 |
| 8859344 | Semiconductor memory | Nozomu Matsuzaki, Norikatsu Takaura, Naoki Yamamoto, Hideyuki Matsuoka, Tomio Iwasaki | 2014-10-14 |
| 8833857 | Vehicle seat | Yoshiro Hara, Yukinori Sugiura, Tatsuya Ono, Takashi Okada | 2014-09-16 |
| 8618523 | Semiconductor device | Norikatsu Takaura, Motoyasu Terao, Yoshihisa Fujisaki, Nozomu Matsuzaki, Kenzo Kurotsuchi +1 more | 2013-12-31 |
| 8106441 | Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same | Satoru Akiyama, Takao Watanabe, Masahiko Hiratani | 2012-01-31 |
| 8044489 | Semiconductor device with fluorine-containing interlayer dielectric film to prevent chalcogenide material layer from exfoliating from the interlayer dielectric film and process for producing the same | — | 2011-10-25 |
| 8000126 | Semiconductor device with recording layer containing indium, germanium, antimony and tellurium | Takahiro Morikawa, Motoyasu Terao, Norikatsu Takaura, Kenzo Kurotsuchi, Nozomu Matsuzaki +2 more | 2011-08-16 |
| 7804118 | Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same | Satoru Akiyama, Takao Watanabe, Masahiko Hiratani | 2010-09-28 |
| 7800153 | Capacitive electrode having semiconductor layers with an interface of separated grain boundaries | Masahiko Hiratani | 2010-09-21 |
| 7728376 | Semiconductor memory device | Hiroshi Miki | 2010-06-01 |
| 7683419 | Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same | Satoru Akiyama, Takao Watanabe, Masahiko Hiratani | 2010-03-23 |
| 7667218 | Semiconductor integrated circuit device and method of manufacturing the same | Naoki Yamamoto, Norikatsu Takaura, Nozomu Matsuzaki, Kenzo Kurotsuchi, Motoyasu Terao | 2010-02-23 |
| 7638786 | Semiconductor and semiconductor manufacturing arrangements having a chalcogenide layer formed of columnar crystal grains perpendicular to a main substrate surface | Motoyasu Terao, Norikatsu Takaura, Takahiro Morikawa, Naoki Yamamoto | 2009-12-29 |
| 7511327 | Capacitive electrode having semiconductor layers with an interface of separated grain boundaries | Masahiko Hiratani | 2009-03-31 |
| 7408218 | Semiconductor device having plural dram memory cells and a logic circuit | Satoru Akiyama, Takao Watanabe, Masahiko Hiratani | 2008-08-05 |
| 7364965 | Semiconductor device and method of fabrication | Osamu Tonomura, Hiroshi Miki, Tomoko Sekiguchi, Kikuo Watanabe | 2008-04-29 |
| 7265407 | Capacitive electrode having semiconductor layers with an interface of separated grain boundaries | Masahiko Hiratani | 2007-09-04 |
| 7259058 | Fabricating method of semiconductor integrated circuits | Yasuhiro Shimamoto, Masahiko Hiratani, Satoshi Yamamoto, Toshihide Nabatame, Toshio Ando +2 more | 2007-08-21 |
| 7112819 | Semiconductor device and manufacturing method thereof | — | 2006-09-26 |
| 6992022 | Fabrication method for semiconductor integrated devices | Yasuhiro Shimamoto, Masahiko Hiratani, Toshihide Nabatame | 2006-01-31 |
| 6989304 | Method for manufacturing a ruthenium film for a semiconductor device | Masahiko Hiratani, Yasuhiro Shimamoto, Toshihide Nabatame | 2006-01-24 |
| 6955959 | Method of making a memory structure having a multilayered contact and a storage capacitor with a composite dielectric layer of crystalized niobium pentoxide and tantalum pentoxide films | Masahiko Hiratani | 2005-10-18 |
| 6833577 | Semiconductor device | Masahiko Hiratani | 2004-12-21 |
| 6743739 | Fabrication method for semiconductor integrated devices | Yasuhiro Shimamoto, Masahiko Hiratani, Toshihide Nabatame | 2004-06-01 |