AY

Atsushi Yagishita

KT Kabushiki Kaisha Toshiba: 50 patents #337 of 21,451Top 2%
📍 Ibaraki, NY: #2 of 4 inventorsTop 50%
Overall (All Time): #50,407 of 4,157,543Top 2%
52
Patents All Time

Issued Patents All Time

Showing 1–25 of 52 patents

Patent #TitleCo-InventorsDate
12402366 Spin qubit-type semiconductor device and integrated circuit thereof Shota Iizuka, Takahiro Mori, Kimihiko Kato, Tetsuya Ueda 2025-08-26
12382843 Device and method for fabricating highly integrated and miniaturized silicon quantum bit device including at least a tunnel field effect transistor with reduced leakage current, inter-quantum bit coupler, and quantum gate operating mechanism that are formed by self-alignment Takahiro Mori 2025-08-05
9613974 Semiconductor device and method for manufacturing the same Hiroki Okamoto, Hiroshi Itokawa, Masayuki Kitamura 2017-04-04
8338889 Semiconductor device and method of manufacturing semiconductor device Akio Kaneko, Satoshi Inaba 2012-12-25
8138031 Semiconductor device and method of manufacturing semiconductor device 2012-03-20
8134209 Semiconductor device and method for manufacturing the same Makoto Fujiwara, Hirohisa Kawasaki, Mariko Takayanagi 2012-03-13
8124465 Method for manufacturing a semiconductor device having a source extension region and a drain extension region 2012-02-28
8053292 Semiconductor device and method of manufacturing semiconductor device Akio Kaneko, Satoshi Inaba 2011-11-08
7915130 Method of manufacturing a semiconductor device Tomohiro Saito, Akio Kaneko 2011-03-29
7820551 Semiconductor device having fins FET and manufacturing method thereof Akio Kaneko 2010-10-26
7795682 Semiconductor device and method manufacturing semiconductor device Akio Kaneko, Satoshi Inaba 2010-09-14
7772076 Method of manufacturing semiconductor device using dummy gate wiring layer Kouji Matsuo, Yasushi Akasaka, Kyoichi Suguro, Yoshitaka Tsunashima 2010-08-10
7755104 FinFET pMOS double gate semiconductor device with uniaxial tensile strain applied to channel by shrinkable gate electrode material, current flow in <110> crystal orientation, and source and drain Schottky contacts with channel and manufacturing method thereof 2010-07-13
7723171 Semiconductor device and method of fabricating the same Akio Kaneko, Kazunari Ishimaru 2010-05-25
7608890 Semiconductor device and method of manufacturing semiconductor device 2009-10-27
7537978 Semiconductor device and manufacturing method thereof Ichiro Mizushima, Tsutomu Sato 2009-05-26
7488631 Semiconductor device having a schottky source/drain transistor 2009-02-10
7479423 Semiconductor device and manufacturing method of semiconductor device Tomohiro Saito 2009-01-20
7465624 Method of manufacturing semiconductor device Kazuaki Nakajima 2008-12-16
7462917 Semiconductor device and method of fabricating the same 2008-12-09
7405449 Semiconductor device and method of manufacturing the same 2008-07-29
7371644 Semiconductor device and method of fabricating the same Akio Kaneko, Kazunari Ishimaru 2008-05-13
7314787 Method of manufacturing a semiconductor device 2008-01-01
7247913 Semiconductor device having a Schottky source/drain transistor 2007-07-24
7242064 Semiconductor device and method of manufacturing the same Tomohiro Saito, Toshihiko Iinuma 2007-07-10