KI

Kazunari Ishimaru

KT Kabushiki Kaisha Toshiba: 25 patents #1,086 of 21,451Top 6%
Overall (All Time): #165,322 of 4,157,543Top 4%
25
Patents All Time

Issued Patents All Time

Showing 1–25 of 25 patents

Patent #TitleCo-InventorsDate
7772692 Semiconductor device with cooling member Tomonao Takamatsu, Hideo Aoki 2010-08-10
7723171 Semiconductor device and method of fabricating the same Atsushi Yagishita, Akio Kaneko 2010-05-25
7687368 Semiconductor device manufacturing method Hirohisa Kawasaki, Kunihiro Kasai, Yasunori Okayama 2010-03-30
7541245 Semiconductor device with silicon-film fins and method of manufacturing the same Hirohisa Kawasaki 2009-06-02
7468923 Semiconductor integrated circuit 2008-12-23
7432542 Semiconductor device with electrostrictive layer in semiconductor layer and method of manufacturing the same 2008-10-07
7371644 Semiconductor device and method of fabricating the same Atsushi Yagishita, Akio Kaneko 2008-05-13
7235469 Semiconductor device and method for manufacturing the same Yasunori Okayama, Kiyotaka Miyano 2007-06-26
7164175 Semiconductor device with silicon-film fins and method of manufacturing the same Hirohisa Kawasaki 2007-01-16
7129550 Fin-shaped semiconductor device Makoto Fujiwara, Akira Hokazono 2006-10-31
7061054 Semiconductor device and semiconductor device manufacturing method Kanna Tomiye, Akira Hokazono 2006-06-13
6977837 Semiconductor memory including static random access memory formed of FinFET Takeshi Watanabe 2005-12-20
6656826 Semiconductor device with fuse to be blown with energy beam and method of manufacturing the semiconductor device 2003-12-02
6627528 Semiconductor device and its manufacturing process 2003-09-30
6365472 Semiconductor device and method of manufacturing the same Fumitomo Matsuoka, Kaori Umezawa 2002-04-02
6355982 Semiconductor memory device having pairs of bit lines arranged on both sides of memory cells Fumitomo Matsuoka 2002-03-12
6066543 Method of manufacturing a gap filling for shallow trench isolation Minoru Takahashi, Fumitomo Matsuoka 2000-05-23
5998849 Semiconductor device having highly-doped source/drain regions with interior edges in a dislocation-free state Fumitomo Matsuoka, Kaori Umezawa 1999-12-07
5960272 Element-isolating construct of a semiconductor integrated circuit having an offset region between impurity doped regions, and process of manufacturing the construct 1999-09-28
5886387 BiCMOS semiconductor integrated circuit device having MOS transistor and bipolar transistor regions of different thickness Masahito Nishigohri 1999-03-23
5731623 Bipolar device with trench structure 1998-03-24
5578518 Method of manufacturing a trench isolation having round corners Hidetoshi Koike, Hiroshi Gojohbori, Fumitomo Matsuoka 1996-11-26
5518961 Semiconductor integrated circuit device with wiring microstructure formed on gates and method of manufacturing the same 1996-05-21
5496744 Method of fabricating complementary poly emitter transistors 1996-03-05
5397910 Semiconductor integrated circuit device with wiring microstructure formed on gates and method of manufacturing the same 1995-03-14