FM

Fumitomo Matsuoka

KT Kabushiki Kaisha Toshiba: 20 patents #1,460 of 21,451Top 7%
Overall (All Time): #226,035 of 4,157,543Top 6%
20
Patents All Time

Issued Patents All Time

Showing 1–20 of 20 patents

Patent #TitleCo-InventorsDate
6699776 MOSFET gate insulating film and method of manufacturing the same Minoru Takahashi 2004-03-02
6388304 Semiconductor device having buried-type element isolation structure and method of manufacturing the same Kunihiro Kasai 2002-05-14
6365472 Semiconductor device and method of manufacturing the same Kazunari Ishimaru, Kaori Umezawa 2002-04-02
6355982 Semiconductor memory device having pairs of bit lines arranged on both sides of memory cells Kazunari Ishimaru 2002-03-12
6333541 MOSFET gate insulating films with oxynitride and oxide Minoru Takahashi 2001-12-25
6248645 Semiconductor device having buried-type element isolation structure and method of manufacturing the same Kunihiro Kasai 2001-06-19
6066543 Method of manufacturing a gap filling for shallow trench isolation Minoru Takahashi, Kazunari Ishimaru 2000-05-23
5998849 Semiconductor device having highly-doped source/drain regions with interior edges in a dislocation-free state Kazunari Ishimaru, Kaori Umezawa 1999-12-07
5773344 Semiconductor device having gate electrode and impurity diffusion layer different in conductivity type and method of manufacturing same Yukari Unno 1998-06-30
5677229 Method for manufacturing semiconductor device isolation region Shigeru Morita, Hisao Yoshimura, Takeo Maeda 1997-10-14
5640033 MOSFET having fine gate electrode structure 1997-06-17
5578518 Method of manufacturing a trench isolation having round corners Hidetoshi Koike, Kazunari Ishimaru, Hiroshi Gojohbori 1996-11-26
5543360 Method of making a semiconductor device with sidewall etch stopper and wide through-hole having multilayered wiring structure Naoki Ikeda 1996-08-06
5521416 Semiconductor device having gate electrode and impurity diffusion layer different in conductivity type and method of manufacturing the same Yukari Unno 1996-05-28
5506168 Method for manufacturing semiconductor device Shigeru Morita, Hisao Yoshimura, Takeo Maeda 1996-04-09
5462893 Method of making a semiconductor device with sidewall etch stopper and wide through-hole having multilayered wiring structure Naoki Ikeda 1995-10-31
5365110 Semiconductor device with multi-layered wiring structure 1994-11-15
5220182 Semiconductor device having conductive sidewall structure between adjacent elements Masaaki Kinugawa 1993-06-15
5084403 Method of manufacturing a semiconductor device including connecting a monocrystalline aluminum wire 1992-01-28
5053349 Method for interconnecting semiconductor devices 1991-10-01