HY

Hisao Yoshimura

KT Kabushiki Kaisha Toshiba: 7 patents #4,294 of 21,451Top 25%
AS Actlight Sa: 1 patents #5 of 11Top 50%
NK Nihon Kohden: 1 patents #238 of 467Top 55%
SO Sony: 1 patents #17,262 of 25,231Top 70%
📍 Tokyo, NY: #69 of 99 inventorsTop 70%
Overall (All Time): #486,523 of 4,157,543Top 15%
10
Patents All Time

Issued Patents All Time

Showing 1–10 of 10 patents

Patent #TitleCo-InventorsDate
12433047 Photodetector Takahiro Hamasaki, Hiroyuki Takashino, Koji Nagahiro, Hiroyuki Ohri, Satoe Miyata +1 more 2025-09-30
11523070 Solid-state imaging element, imaging device, and method for controlling solid-state imaging element Ryoji Suzuki 2022-12-06
9693703 Electrocardiogram display device 2017-07-04
7638432 Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same Katsura Miyashita, Mariko Takagi 2009-12-29
7220672 Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same Katsura Miyashita, Mariko Takagi 2007-05-22
6869867 SEMICONDUCTOR DEVICE COMPRISING METAL SILICIDE FILMS FORMED TO COVER GATE ELECTRODE AND SOURCE-DRAIN DIFFUSION LAYERS AND METHOD OF MANUFACTURING THE SAME WHEREIN THE SILICIDE ON GATE IS THICKER THAN ON SOURCE-DRAIN Katsura Miyashita, Mariko Takagi 2005-03-22
6037605 Semiconductor device and method of manufacturing the same 2000-03-14
5677229 Method for manufacturing semiconductor device isolation region Shigeru Morita, Fumitomo Matsuoka, Takeo Maeda 1997-10-14
5506168 Method for manufacturing semiconductor device Shigeru Morita, Fumitomo Matsuoka, Takeo Maeda 1996-04-09
5489795 Semiconductor integrated circuit device having double well structure Takeo Maeda, Masakazu Kakumu 1996-02-06