KM

Katsura Miyashita

KT Kabushiki Kaisha Toshiba: 8 patents #3,802 of 21,451Top 20%
TC Toshiba America Electronic Components: 1 patents #23 of 77Top 30%
TS Toshiba Electronic Devices & Storage: 1 patents #470 of 900Top 55%
📍 Yokohama, NY: #52 of 63 inventorsTop 85%
Overall (All Time): #541,707 of 4,157,543Top 15%
9
Patents All Time

Issued Patents All Time

Showing 1–9 of 9 patents

Patent #TitleCo-InventorsDate
12432967 Semiconductor device and manufacturing method thereof Yuhki Fujino, Tsuyoshi Kachi, Shingo Sato 2025-09-30
8158472 Structures of SRAM bit cells 2012-04-17
8110874 Hybrid substrates and method of manufacture 2012-02-07
7820492 Electrical fuse with metal silicide pipe under gate electrode Yoshiaki Toyoshima 2010-10-26
7652335 Reversely tapered contact structure compatible with dual stress liner process 2010-01-26
7638432 Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same Hisao Yoshimura, Mariko Takagi 2009-12-29
7220672 Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same Hisao Yoshimura, Mariko Takagi 2007-05-22
6869867 SEMICONDUCTOR DEVICE COMPRISING METAL SILICIDE FILMS FORMED TO COVER GATE ELECTRODE AND SOURCE-DRAIN DIFFUSION LAYERS AND METHOD OF MANUFACTURING THE SAME WHEREIN THE SILICIDE ON GATE IS THICKER THAN ON SOURCE-DRAIN Hisao Yoshimura, Mariko Takagi 2005-03-22
6673705 Method of manufacturing a MISFET having post oxide films having at least two kinds of thickness 2004-01-06