Issued Patents All Time
Showing 26–50 of 52 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7214576 | Manufacturing method of semiconductor device | Akio Kaneko | 2007-05-08 |
| 7208353 | Semiconductor device and manufacturing method thereof | Ichiro Mizushima, Tsutomu Sato | 2007-04-24 |
| 7208797 | Semiconductor device | Kouji Matsuo, Yasushi Akasaka, Kyoichi Suguro, Yoshitaka Tsunashima | 2007-04-24 |
| 7198994 | Semiconductor device and manufacturing method of semiconductor device | Tomohiro Saito | 2007-04-03 |
| 7064024 | Semiconductor device and method of fabricating the same | — | 2006-06-20 |
| 6979846 | Semiconductor device and manufacturing method thereof | Ichiro Mizushima, Tsutomu Sato | 2005-12-27 |
| 6919260 | Method of manufacturing a substrate having shallow trench isolation | Kaori Umezawa, Norihiko Tsuchiya, Yoshiaki Matsushita, Hiroyuki Kamijou, Tsunehiro KITA | 2005-07-19 |
| 6887747 | Method of forming a MISFET having a schottky junctioned silicide | Kouji Matsuo | 2005-05-03 |
| 6879001 | Semiconductor device and manufacturing method of semiconductor device | Tomohiro Saito | 2005-04-12 |
| 6815279 | Manufacturing method of CMOS devices | Kouji Matsuo | 2004-11-09 |
| 6812535 | Semiconductor device with a disposable gate and method of manufacturing the same | Kazuaki Nakajima | 2004-11-02 |
| 6794720 | Dynamic threshold voltage metal insulator field effect transistor | Tomohiro Saito, Toshihiko Iinuma | 2004-09-21 |
| 6664592 | Semiconductor device with groove type channel structure | Seiji Inumiya, Tomohiro Saito, Katsuhiko Hieda, Toshihiko Iinuma | 2003-12-16 |
| 6607952 | Semiconductor device with a disposable gate and method of manufacturing the same | Kazuaki Nakajima | 2003-08-19 |
| 6515338 | Semiconductor device and manufacturing method therefor | Seiji Inumiya, Tomohiro Saito, Katsuhiko Hieda, Toshihiko Iinuma | 2003-02-04 |
| 6465823 | Dynamic threshold voltage metal insulator semiconductor effect transistor | Tomohiro Saito, Toshihiko Iinuma | 2002-10-15 |
| 6346438 | Method of manufacturing a semiconductor device | Kouji Matsuo, Yasushi Akasaka, Kyoichi Suguro, Yoshitaka Tsunashima | 2002-02-12 |
| 6310367 | MOS transistor having a tensile-strained SI layer and a compressive-strained SI-GE layer | Kouji Matsuo | 2001-10-30 |
| 6087698 | Semiconductor device and method of manufacturing the same | Tomohiro Saito, Minoru Takahashi | 2000-07-11 |
| 6054355 | Method of manufacturing a semiconductor device which includes forming a dummy gate | Seiji Inumiya, Tomohiro Saito, Katsuhiko Hieda, Toshihiko Iinuma | 2000-04-25 |
| 5994756 | Substrate having shallow trench isolation | Kaori Umezawa, Norihiko Tsuchiya, Yoshiaki Matsushita, Hiroyuki Kamijou, Tsunehiro KITA | 1999-11-30 |
| 5872383 | Semiconductor device and method of manufacturing the same | — | 1999-02-16 |
| 5739575 | Dielectrically isolated substrate and method for manufacturing the same | Masanori Numano, Norihiko Tsuchiya, Hiroyasu Kubota, Yoshiaki Matsushita, Yoshiki Hayashi +4 more | 1998-04-14 |
| 5675176 | Semiconductor device and a method for manufacturing the same | Yukihiro Ushiku, Satoshi Inaba, Minoru Takahashi, Masanori Numano, Yoshiki Hayashi +4 more | 1997-10-07 |
| 5650339 | Method of manufacturing thin film transistor | Tomohiro Saito, Minoru Takahashi | 1997-07-22 |