YM

Yoshiaki Matsushita

KT Kabushiki Kaisha Toshiba: 24 patents #1,154 of 21,451Top 6%
VA Vlsi Technology Research Association: 4 patents #2 of 70Top 3%
HZ Hitachi Zosen: 3 patents #73 of 531Top 15%
NI Ngk Insulators: 2 patents #947 of 2,083Top 50%
HI Hitachi: 2 patents #13,388 of 28,497Top 50%
TI Tokyo Electric Power Company Holdings, Incorporated: 2 patents #90 of 711Top 15%
TO Toshiba: 1 patents #1,121 of 2,688Top 45%
📍 Platte City, MO: #4 of 107 inventorsTop 4%
🗺 Missouri: #283 of 23,789 inventorsTop 2%
Overall (All Time): #95,070 of 4,157,543Top 3%
36
Patents All Time

Issued Patents All Time

Showing 26–36 of 36 patents

Patent #TitleCo-InventorsDate
4805419 Absorption type heat exchanging apparatus Tetsuro Furukawa, Kensuke Yoshikawa, Mitsuru Mizuuchi, Masaharu Furutera, Nobuharu Sakabata +2 more 1989-02-21
4787997 Etching solution for evaluating crystal faults Yoshihiko Saito 1988-11-29
4672821 Absorption-type heat pump Masaharu Furutera, Tetsuro Furukawa, Kenji Nakauchi 1987-06-16
4662191 Absorption - type refrigeration system Masaharu Furutera, Tetsuro Furukawa 1987-05-05
4645546 Semiconductor substrate 1987-02-24
4579601 Method of growing a resistive epitaxial layer on a short lifetime epi-layer Shuichi Samata 1986-04-01
4500388 Method for forming monocrystalline semiconductor film on insulating film Yamichi Ohmura 1985-02-19
4378269 Method of manufacturing a single crystal silicon rod Shinichiro Takasu, Seigo Kishino 1983-03-29
4376657 Method of making fault-free surface zone in semiconductor devices by step-wise heat treating Kazutoshi Nagasawa, Seigo Kishino, Masaru Kanamori 1983-03-15
4314595 Method of forming nondefective zone in silicon single crystal wafer by two stage-heat treatment Kazuhiko Yamamoto, Masaru Kanamori, Kazutoshi Nagasawa, Naotsugu Yoshihiro, Seigo Kishino 1982-02-09
4193783 Method of treating a silicon single crystal ingot 1980-03-18