Issued Patents All Time
Showing 25 most recent of 39 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10475886 | Modified fin cut after epitaxial growth | Sivananda K. Kanakasabapathy, Fee Li Lie, Soon-Cheon Seo | 2019-11-12 |
| 9812556 | Semiconductor device and method of manufacturing the semiconductor device | Shogo Mochizuki, Gen Tsutsui, Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek | 2017-11-07 |
| 9793379 | FinFET spacer without substrate gouging or spacer foot | Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz | 2017-10-17 |
| 9728649 | Semiconductor device including embedded crystalline back-gate bias planes, related design structure and method of fabrication | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2017-08-08 |
| 9653573 | Replacement metal gate including dielectric gate material | Linus Jang, Sivananda K. Kanakasabapathy, Sanjay C. Mehta, Soon-Cheon Seo | 2017-05-16 |
| 9496282 | Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-11-15 |
| 9472576 | Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-10-18 |
| 9417501 | Electrically controlled optical fuse and method of fabrication | Kangguo Cheng | 2016-08-16 |
| 9391069 | MIM capacitor with enhanced capacitance formed by selective epitaxy | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-07-12 |
| 9379135 | FinFET semiconductor device having increased gate height control | Kangguo Cheng, Ali Khakifirooz, Shom Ponoth | 2016-06-28 |
| 9368343 | Reduced external resistance finFET device | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2016-06-14 |
| 9331073 | Epitaxially grown quantum well finFETs for enhanced pFET performance | Marc A. Bergendahl, James J. Demarest, Hong He, Seth L. Knupp, Sean Teehan +2 more | 2016-05-03 |
| 9324709 | Self-aligned gate contact structure | Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz, Viraj Y. Sardesai | 2016-04-26 |
| 9312273 | Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-04-12 |
| 9299617 | Locally isolated protected bulk FinFET semiconductor device | Kangguo Cheng | 2016-03-29 |
| 9281198 | Method of fabricating a semiconductor device including embedded crystalline back-gate bias planes | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-03-08 |
| 9269792 | Method and structure for robust finFET replacement metal gate integration | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2016-02-23 |
| 9257536 | FinFET with crystalline insulator | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-02-09 |
| 9224607 | Dual epitaxy region integration | Kangguo Cheng, Ali Khakifirooz, Shom Ponoth | 2015-12-29 |
| 9214397 | Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs) | Bruce B. Doris, Kangguo Cheng, Steven J. Holmes, Ali Khakifirooz, Pranita Kerber +2 more | 2015-12-15 |
| 9190487 | Prevention of fin erosion for semiconductor devices | Ali Khakifirooz, Thomas N. Adam, Kangguo Cheng, Shom Ponoth, Alexander Reznicek +2 more | 2015-11-17 |
| 9105606 | Self aligned contact with improved robustness | Kangguo Cheng, Ali Khakifirooz, Shom Ponoth | 2015-08-11 |
| 9105663 | FinFET with silicon germanium stressor and method of forming | Kangguo Cheng, Ali Khakifirooz, Nicolas Loubet, Shogo Mochizuki, Alexander Reznicek +1 more | 2015-08-11 |
| 9087796 | Semiconductor fabrication method using stop layer | Thomas N. Adam, Donald F. Canaperi, Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek +1 more | 2015-07-21 |
| 9059253 | Self-aligned contacts for replacement metal gate transistors | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Thomas N. Adam | 2015-06-16 |