Issued Patents All Time
Showing 25 most recent of 159 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11450680 | Split gate charge trapping memory cells having different select gate and memory gate heights | Chun Chen, Shenqing Fang | 2022-09-20 |
| 11342429 | Memory first process flow and device | Shenqing Fang, Chun Chen, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad +1 more | 2022-05-24 |
| 11258023 | Resistive change elements using passivating interface gaps and methods for making same | Thomas Rueckes, Tatsuya Yamaguchi, Syuji NOZAWA, Nagisa Sato | 2022-02-22 |
| 11056646 | Memory device having programmable impedance elements with a common conductor formed below bit lines | Venkatesh P. Gopinath, Jeffrey A. Shields, Kuei-Chang Tsai, Chakravarthy Gopalan, Michael A. Van Buskirk | 2021-07-06 |
| 10984861 | Reference circuits and methods for resistive memories | Ishai Naveh, Venkatesh P. Gopinath, John Dinh | 2021-04-20 |
| 10923601 | Charge trapping split gate device and method of fabricating same | Chun Chen, Shenqing Fang, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad | 2021-02-16 |
| 10818761 | Memory first process flow and device | Shenqing Fang, Chun Chen, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad +1 more | 2020-10-27 |
| 10777568 | Split gate charge trapping memory cells having different select gate and memory gate heights | Chun Chen, Shenqing Fang | 2020-09-15 |
| 10403731 | Memory first process flow and device | Shenqing Fang, Chun Chen, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad +1 more | 2019-09-03 |
| 10141393 | Three dimensional capacitor | Unsoon Kim, Shenqing Fang, Chun Chen, Kuo-Tung Chang | 2018-11-27 |
| 10014380 | Memory first process flow and device | Shenqing Fang, Chun Chen, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad +1 more | 2018-07-03 |
| 9966477 | Charge trapping split gate device and method of fabricating same | Chun Chen, Shenqing Fang, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad | 2018-05-08 |
| 9922833 | Charge trapping split gate embedded flash memory and associated methods | Chun Chen, Sameer Haddad, Kuo-Tung Chang, Unsoon Kim, Shenqing Fang +2 more | 2018-03-20 |
| 9917166 | Memory first process flow and device | Shenqing Fang, Chun Chen, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad +1 more | 2018-03-13 |
| 9590079 | Use disposable gate cap to form transistors, and split gate charge trapping memory cells | Chun Chen, Shenqing Fang | 2017-03-07 |
| 9368644 | Gate formation memory by planarization | Shenqing Fang, Chun Chen, David Matsumoto | 2016-06-14 |
| 9368606 | Memory first process flow and device | Shenqing Fang, Chun Chen, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad +1 more | 2016-06-14 |
| 9209197 | Memory gate landing pad made from dummy features | Chun Chen, Unsoon Kim, Shenqing Fang | 2015-12-08 |
| 8957472 | Memory device having trapezoidal bitlines and method of fabricating same | Ashot Melik-Martirosian, Mark Randolph | 2015-02-17 |
| 8816438 | Process charging protection for split gate charge trapping flash | Chun Chen, Sameer Haddad, Kuo-Tung Chang, Unsoon Kim, Shenqing Fang | 2014-08-26 |
| 8691647 | Memory devices containing a high-K dielectric layer | Wei Zheng, Arvind Halliyal, Jack F. Thomas | 2014-04-08 |
| 8673716 | Memory manufacturing process with bitline isolation | Tazrien Kamal, Jean Y. Yang, Emmanuil Lingunis, Hidehiko Shiraiwa, Yu Sun | 2014-03-18 |
| 8368219 | Buried silicide local interconnect with sidewall spacers and method for making the same | Arvind Halliyal, Zoran Krivokapic, Matthew S. Buynoski, Nicholas H. Tripsas, Minh Van Ngo +2 more | 2013-02-05 |
| 8125018 | Memory device having trapezoidal bitlines and method of fabricating same | Ashot Melik-Martirosian, Mark Randolph | 2012-02-28 |
| 8049334 | Buried silicide local interconnect with sidewall spacers and method for making the same | Arvind Halliyal, Zoran Krivokapic, Matthew S. Buynoski, Nicholas H. Tripsas, Minh Van Ngo +2 more | 2011-11-01 |