| 12400859 |
Metal hard mask for precise tuning of mandrels |
Joe Lee, Yann Mignot, Koichi Motoyama |
2025-08-26 |
| 12243819 |
Single-mask alternating line deposition |
Brent A. Anderson, Lawrence A. Clevenger, Kisik Choi, Nicholas Anthony Lanzillo, Robert R. Robison |
2025-03-04 |
| 12218003 |
Selective ILD deposition for fully aligned via with airgap |
Benjamin D. Briggs, Huai Huang, Lawrence A. Clevenger, Michael Rizzolo, Hosadurga Shobha |
2025-02-04 |
| 12156486 |
Horizontal RRAM device and architecture for variability reduction |
Timothy Mathew Philip, Nicholas Anthony Lanzillo, Youngseok Kim, Lawrence A. Clevenger |
2024-11-26 |
| 12106963 |
Self aligned pattern formation post spacer etchback in tight pitch configurations |
Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Nelson Felix, Sivananda K. Kanakasabapathy +2 more |
2024-10-01 |
| 11990410 |
Top via interconnect having a line with a reduced bottom dimension |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Kisik Choi, Robert R. Robison |
2024-05-21 |
| 11961759 |
Interconnects having spacers for improved top via critical dimension and overlay tolerance |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Kisik Choi, Robert R. Robison |
2024-04-16 |
| 11955424 |
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device |
Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Huai Huang, Michael Rizzolo |
2024-04-09 |
| 11894265 |
Top via with damascene line and via |
Lawrence A. Clevenger, Brent A. Anderson, Kisik Choi, Nicholas Anthony Lanzillo, Robert R. Robison |
2024-02-06 |
| 11876023 |
Conformal film thickness determination using angled geometric features and vertices tracking |
Marc A. Bergendahl, James J. Demarest, Jean Wynne, Christopher J. Waskiewicz, Jonathan Fry |
2024-01-16 |
| 11869808 |
Top via process with damascene metal |
Lawrence A. Clevenger, Brent A. Anderson, Nicholas Anthony Lanzillo, Kisik Choi, Robert R. Robison |
2024-01-09 |
| 11854884 |
Fully aligned top vias |
Nicholas Anthony Lanzillo, Koichi Motoyama, Somnath Ghosh, Robert R. Robison, Lawrence A. Clevenger |
2023-12-26 |
| 11823998 |
Top via with next level line selective growth |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Kisik Choi, Robert R. Robison |
2023-11-21 |
| 11804406 |
Top via cut fill process for line extension reduction |
Brent A. Anderson, Lawrence A. Clevenger, Kisik Choi, Nicholas Anthony Lanzillo, Robert R. Robison |
2023-10-31 |
| 11791258 |
Conductive lines with subtractive cuts |
Brent A. Anderson, Lawrence A. Clevenger, Kisik Choi, Nicholas Anthony Lanzillo, Robert R. Robison |
2023-10-17 |
| 11735524 |
Electrical device having conductive lines with air gaps therebetween and interconnects without exclusion zones |
Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo |
2023-08-22 |
| 11676854 |
Selective ILD deposition for fully aligned via with airgap |
Benjamin D. Briggs, Huai Huang, Lawrence A. Clevenger, Michael Rizzolo, Hosadurga Shobha |
2023-06-13 |
| 11670510 |
Self aligned pattern formation post spacer etchback in tight pitch configurations |
Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Nelson Felix, Sivananda K. Kanakasabapathy +2 more |
2023-06-06 |
| 11670542 |
Stepped top via for via resistance reduction |
Brent A. Anderson, Lawrence A. Clevenger, Kisik Choi, Nicholas Anthony Lanzillo, Robert R. Robison |
2023-06-06 |
| 11646221 |
Self-aligned pattern formation for a semiconductor device |
Sean D. Burns, Lawrence A. Clevenger, Nelson Felix, Sivananda K. Kanakasabapathy, Nicole Saulnier |
2023-05-09 |
| 11621189 |
Barrier-less prefilled via formation |
Nicholas Anthony Lanzillo, Hosadurga Shobha, Junli Wang, Lawrence A. Clevenger, Robert R. Robison +1 more |
2023-04-04 |
| 11600565 |
Top via stack |
Brent A. Anderson, Lawrence A. Clevenger, Kisik Choi, Nicholas Anthony Lanzillo, Robert R. Robison |
2023-03-07 |
| 11587830 |
Self-forming barrier for use in air gap formation |
Benjamin D. Briggs, Elbert E. Huang, Takeshi Nogami |
2023-02-21 |
| 11574864 |
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device |
Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Huai Huang, Michael Rizzolo |
2023-02-07 |
| 11437317 |
Single-mask alternating line deposition |
Brent A. Anderson, Lawrence A. Clevenger, Kisik Choi, Nicholas Anthony Lanzillo, Robert R. Robison |
2022-09-06 |
