Issued Patents All Time
Showing 51–75 of 124 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11552180 | Antiferroelectric perovskite gate oxide for transistor applications | Sasikanth Manipatruni, Seiyon Kim, Ian A. Young | 2023-01-10 |
| 11532439 | Ultra-dense ferroelectric memory with self-aligned patterning | Chia-Ching Lin, Sou-Chi Chang, Nazila Haratipour, Seung Hoon Sung, Ashish Verma Penumatcha +2 more | 2022-12-20 |
| 11522130 | Metal insulator transition field programmable routing block | Daniel H. Morris, Ian A. Young | 2022-12-06 |
| 11502103 | Memory cell with a ferroelectric capacitor integrated with a transtor gate | Daniel H. Morris, Seiyon Kim, Ian A. Young | 2022-11-15 |
| 11495596 | Logic-embedded diode/tunnel diode coupled to floating gate with I-V characteristics suitable for logic state retention | Daniel H. Morris, Ian A. Young | 2022-11-08 |
| 11462540 | Floating body memory cell having gates favoring different conductivity type regions | Peter L. D. Chang, David L. Kencke, Ibrahim Ban | 2022-10-04 |
| 11450675 | One transistor and one ferroelectric capacitor memory cells in diagonal arrangements | Daniel H. Morris, Ian A. Young | 2022-09-20 |
| 11404562 | Tunneling field effect transistors | Cheng-Ying Huang, Willy Rachmady, Matthew V. Metz, Ashish Agrawal, Benjamin Chu-Kung +2 more | 2022-08-02 |
| 11355504 | Anti-ferroelectric capacitor memory cell | Daniel H. Morris, Ian A. Young | 2022-06-07 |
| 11355505 | Vertical backend transistor with ferroelectric material | Daniel H. Morris, Ian A. Young | 2022-06-07 |
| 11335793 | Vertical tunneling field-effect transistors | Cheng-Ying Huang, Jack T. Kavalieros, Ian A. Young, Matthew V. Metz, Willy Rachmady +2 more | 2022-05-17 |
| 11322504 | Ferroelectric-capacitor integration using novel multi-metal-level interconnect with replaced dielectric for ultra-dense embedded SRAM in state-of-the-art CMOS technology | Daniel H. Morris, Seiyon Kim, Yih Wang, Ruth A. Brain, Ian A. Young | 2022-05-03 |
| 11316027 | Relaxor ferroelectric capacitors and methods of fabrication | Sou-Chi Chang, Chia-Ching Lin, Nazila Haratipour, Tanay Gosavi, I-Cheng Tung +4 more | 2022-04-26 |
| 11257822 | Three-dimensional nanoribbon-based dynamic random-access memory | Wilfred Gomes, Kinyip Phoa, Mauro J. Kobrinsky, Tahir Ghani, Rajesh Kumar | 2022-02-22 |
| 11239361 | Multilayer insulator stack for ferroelectric transistor and capacitor | Joshua M. Howard, Seiyon Kim, Ian A. Young | 2022-02-01 |
| 11232832 | Polarization gate stack SRAM | Daniel H. Morris, Ian A. Young | 2022-01-25 |
| 11171145 | Memory devices based on capacitors with built-in electric field | Sou-Chi Chang, Daniel H. Morris, Seiyon Kim, Ashish Verma Penumatcha, Ian A. Young | 2021-11-09 |
| 11138499 | Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuits | Abhishek A. Sharma, Jack T. Kavalieros, Ian A. Young, Sasikanth Manipatruni, Ram Krishnamurthy +7 more | 2021-10-05 |
| 11107908 | Transistors with metal source and drain contacts including a Heusler alloy | Sasikanth Manipatruni, Anurag Chaudhry, Dmitri E. Nikonov, Jasmeet S. Chawla, Christopher J. Wiegand +2 more | 2021-08-31 |
| 11063131 | Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering | Nazila Haratipour, Sou-Chi Chang, Chia-Ching Lin, Jack T. Kavalieros, Ian A. Young | 2021-07-13 |
| 11056593 | Semiconductor devices with metal contacts including crystalline alloys | Sasikanth Manipatruni, Dmitri E. Nikonov, Christopher J. Wiegand, Anurag Chaudhry, Jasmeet S. Chawla +1 more | 2021-07-06 |
| 11004868 | Memory field-effect transistors and methods of manufacturing the same | Seiyon Kim, Joshua M. Howard, Ian A. Young, Daniel H. Morris | 2021-05-11 |
| 10998339 | One transistor and ferroelectric FET based memory cell | Daniel H. Morris, Ian A. Young | 2021-05-04 |
| 10944399 | Multi-level spin logic | Sasikanth Manipatruni, Ian A. Young, Dmitri E. Nikonov, Patrick Morrow, Anurag Chaudhry | 2021-03-09 |
| 10916547 | Floating body memory cell having gates favoring different conductivity type regions | Peter L. D. Chang, David L. Kencke, Ibrahim Ban | 2021-02-09 |