Issued Patents All Time
Showing 151–175 of 238 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9698013 | Methods and structures to prevent sidewall defects during selective epitaxy | Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz, Sansaptak Dasgupta +6 more | 2017-07-04 |
| 9698265 | Strained channel region transistors employing source and drain stressors and systems including the same | Van H. Le, Harold W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros | 2017-07-04 |
| 9691857 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2017-06-27 |
| 9685508 | High voltage field effect transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2017-06-20 |
| 9685381 | Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon | Niti Goel, Ravi Pillarisetty, Willy Rachmady, Jack T. Kavalieros, Gilbert Dewey +4 more | 2017-06-20 |
| 9684682 | Sharding of in-memory objects across NUMA nodes | Amit Ganesh, Vineet Marwah | 2017-06-20 |
| 9666583 | Methods of containing defects for non-silicon device engineering | Niti Goel, Ravi Pillarisetty, Robert S. Chau, Willy Rachmady, Matthew V. Metz +6 more | 2017-05-30 |
| 9666492 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Jack T. Kavalieros, Willy Rachmady +4 more | 2017-05-30 |
| 9653680 | Techniques for filament localization, edge effect reduction, and forming/switching voltage reduction in RRAM devices | Ravi Pillarisetty, Prashant Majhi, Uday Shah, Elijah V. Karpov, Brian S. Doyle +1 more | 2017-05-16 |
| 9653548 | Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack | Gilbert Dewey, Marko Radosavljevic, Ravi Pillarisetty, Benjamin Chu-Kung | 2017-05-16 |
| 9653559 | Methods to enhance doping concentration in near-surface layers of semiconductors and methods of making same | Gilbert Dewey, Marko Radosavljevic, Niti Goel, Sanaz Kabehie, Matthew V. Metz +1 more | 2017-05-16 |
| 9645928 | Distributed directory service for in-memory compression unit home location | Amit Ganesh, Vineet Marwah | 2017-05-09 |
| 9640671 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2017-05-02 |
| 9640537 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more | 2017-05-02 |
| 9640622 | Selective epitaxially grown III-V materials based devices | Niti Goel, Gilbert Dewey, Matthew V. Metz, Marko Radosavljevic, Benjamin Chu-Kung +2 more | 2017-05-02 |
| 9634007 | Trench confined epitaxially grown device layer(s) | Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more | 2017-04-25 |
| 9627384 | Transistors with high concentration of boron doped germanium | Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Ravi Pillarisetty, Jack T. Kavalieros +3 more | 2017-04-18 |
| 9606921 | Granular creation and refresh of columnar data | Jesse Kamp, Vineet Marwah, Amit Ganesh, Michael J. Gleeson, Maheswaran Venkatachalam +2 more | 2017-03-28 |
| 9590069 | Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Niti Goel, Sanaz K. Gardner +3 more | 2017-03-07 |
| 9583396 | Making a defect free fin based device in lateral epitaxy overgrowth region | Niti Goel, Benjamin Chu-Kung, Sansaptak Dasgupta, Matthew V. Metz, Van H. Le +3 more | 2017-02-28 |
| 9583574 | Epitaxial buffer layers for group III-N transistors on silicon substrates | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Robert S. Chau | 2017-02-28 |
| 9577190 | Thermal management structure for low-power nonvolatile filamentary switch | Elijah V. Karpov, Prashant Majhi, Ravi Pillarisetty, Uday Shah, Brian S. Doyle +1 more | 2017-02-21 |
| 9570614 | Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more | 2017-02-14 |
| 9530878 | III-N material structure for gate-recessed transistors | Han Wui Then, Marko Radosavljevic, Uday Shah, Ravi Pillarisetty, Benjamin Chu-Kung +2 more | 2016-12-27 |
| 9478635 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more | 2016-10-25 |