Issued Patents All Time
Showing 151–173 of 173 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9202889 | Method for improving transistor performance through reducing the salicide interface resistance | Anand S. Murthy, Boyan Boyanov, Thomas Hoffman | 2015-12-01 |
| 9184294 | High mobility strained channels for fin-based transistors | Stephen M. Cea, Anand S. Murthy, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +1 more | 2015-11-10 |
| 9153583 | III-V layers for N-type and P-type MOS source-drain contacts | Anand S. Murthy, Tahir Ghani | 2015-10-06 |
| 9129827 | Conversion of strain-inducing buffer to electrical insulator | Annalisa Cappellani, Van H. Le, Kelin J. Kuhn, Stephen M. Cea | 2015-09-08 |
| 9117791 | Selective germanium P-contact metalization through trench | Anand S. Murthy, Tahir Ghani | 2015-08-25 |
| 9059024 | Self-aligned contact metallization for reduced contact resistance | Anand S. Murthy, Tahir Ghani | 2015-06-16 |
| 9012284 | Nanowire transistor devices and forming techniques | Kelin J. Kuhn, Seiyon Kim, Anand S. Murthy, Daniel B. Aubertine | 2015-04-21 |
| 8994104 | Contact resistance reduction employing germanium overlayer pre-contact metalization | Anand S. Murthy, Tahir Ghani | 2015-03-31 |
| 8957476 | Conversion of thin transistor elements from silicon to silicon germanium | Daniel B. Aubertine, Anand S. Murthy, Gaurav Thareja, Stephen M. Cea | 2015-02-17 |
| 8901537 | Transistors with high concentration of boron doped germanium | Anand S. Murthy, Tahir Ghani, Ravi Pillarisetty, Niloy Mukherjee, Jack T. Kavalieros +3 more | 2014-12-02 |
| 8896066 | Tin doped III-V material contacts | Anand S. Murthy, Michael Jackson, Harold W. Kennel | 2014-11-25 |
| 8847281 | High mobility strained channels for fin-based transistors | Stephen M. Cea, Anand S. Murthy, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +1 more | 2014-09-30 |
| 8482043 | Method for improving transistor performance through reducing the salicide interface resistance | Anand S. Murthy, Boyan Boyanov, Thomas Hoffman | 2013-07-09 |
| 7812394 | CMOS transistor junction regions formed by a CVD etching and deposition sequence | Anand S. Murthy, Andrew N. Westmeyer, Michael L. Hattendorf, Jeffrey R. Wank | 2010-10-12 |
| 7678631 | Formation of strain-inducing films | Anand S. Murthy, Michael L. Hattendorf | 2010-03-16 |
| 7479432 | CMOS transistor junction regions formed by a CVD etching and deposition sequence | Anand S. Murthy, Andrew N. Westmeyer, Michael L. Hattendorf, Jeffrey R. Wank | 2009-01-20 |
| 7402872 | Method for forming an integrated circuit | Anand S. Murthy, Andrew N. Westmeyer, Michael L. Hattendorf, Tahir Ghani | 2008-07-22 |
| 7358547 | Selective deposition to improve selectivity and structures formed thereby | Anand S. Murthy, Nayanee Gupta, Chris Auth | 2008-04-15 |
| 7274055 | Method for improving transistor performance through reducing the salicide interface resistance | Anand S. Murthy, Boyan Boyanov, Thomas Hoffmann | 2007-09-25 |
| 7195985 | CMOS transistor junction regions formed by a CVD etching and deposition sequence | Anand S. Murthy, Andrew N. Westmeyer, Michael L. Hattendorf, Jeffrey R. Wank | 2007-03-27 |
| 7129139 | Methods for selective deposition to improve selectivity | Anand S. Murthy, Nayanee Gupta, Chris Auth | 2006-10-31 |
| 6949482 | Method for improving transistor performance through reducing the salicide interface resistance | Anand S. Murthy, Boyan Boyanov, Thomas Hoffmann | 2005-09-27 |
| 6097627 | Quantum random address memory with nano-diode mixer | William M. Peterson, Daniel S. Marshall | 2000-08-01 |