Issued Patents All Time
Showing 251–271 of 271 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5855962 | Flowable spin-on insulator | Donna R. Cote | 1999-01-05 |
| 5773362 | Method of manufacturing an integrated ULSI heatsink | William R. Tonti, Jack A. Mandelman, Jerzy M. Zalesinski, Toshiharu Furukawa, Dureseti Chidambarrao | 1998-06-30 |
| 5770469 | Method for forming semiconductor structure using modulation doped silicate glasses | Kevin J. Uram, John Kevin Shugrue, Nathan Sandler, Matthias Ilg | 1998-06-23 |
| 5753948 | Advanced damascene planar stack capacitor fabrication method | Matthias Ilg, Kevin J. Uram | 1998-05-19 |
| 5729052 | Integrated ULSI heatsink | William R. Tonti, Jack A. Mandelman, Jerzy M. Zalesinski, Toshiharu Furukawa, Dureseti Chidambarrao | 1998-03-17 |
| 5714798 | Selective deposition process | Michael D. Armacost, Steven A. Grundon, David L. Harmon, John F. Rembetski | 1998-02-03 |
| 5622596 | High density selective SiO.sub.2 :Si.sub.3 N.sub.4 etching using a stoichiometrically altered nitride etch stop | Michael D. Armacost, David M. Dobuzinsky, Jeffrey P. Gambino | 1997-04-22 |
| 5618379 | Selective deposition process | Michael D. Armacost, Steven A. Grundon, David L. Harmon, John F. Rembetski | 1997-04-08 |
| 5610441 | Angle defined trench conductor for a semiconductor device | Daniel Carl, Donald M. Kenney, Walter E. Mlynko | 1997-03-11 |
| 5563105 | PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element | David M. Dobuzinsky, Tetsuo Matsuda, James G. Ryan, Michael J. Shapiro | 1996-10-08 |
| 5538592 | Non-random sub-lithography vertical stack capacitor | Bomy Chen, Gary B. Bronner | 1996-07-23 |
| 5539154 | Fluorinated silicon nitride films | David M. Dobuzinsky, Douglas J. Dopp, David L. Harmon | 1996-07-23 |
| 5536360 | Method for etching boron nitride | David M. Dobuzinsky | 1996-07-16 |
| 5468687 | Method of making TA.sub.2 O.sub.5 thin film by low temperature ozone plasma annealing (oxidation) | Dan Carl, David M. Dobuzinsky, Tue Nguyen | 1995-11-21 |
| 5462812 | Fluorinated silicon nitride films | David M. Dobuzinsky, Douglas J. Dopp, David L. Harmon | 1995-10-31 |
| 5455204 | Thin capacitor dielectric by rapid thermal processing | David M. Dobuzinsky, Tue Nguyen | 1995-10-03 |
| 5412246 | Low temperature plasma oxidation process | David M. Dobuzinsky, David L. Harmon, Srinandan R. Kasi, Donald M. Kenney, Tue Nguyen +1 more | 1995-05-02 |
| 5217567 | Selective etching process for boron nitride films | Donna R. Cote, David M. Dobuzinsky | 1993-06-08 |
| 5204138 | Plasma enhanced CVD process for fluorinated silicon nitride films | David M. Dobuzinsky, Douglas J. Dopp, David L. Harmon | 1993-04-20 |
| 4811067 | High density vertically structured memory | Brian F. Fitzgerald, Kim Y. Nguyen | 1989-03-07 |
| 4635139 | Asperity burst writer | James M. Severson | 1987-01-06 |