Issued Patents All Time
Showing 276–300 of 581 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10056503 | MIS capacitor for finned semiconductor structure | Keith E. Fogel, Shogo Mochizuki, Alexander Reznicek | 2018-08-21 |
| 10056254 | Methods for removal of selected nanowires in stacked gate all around architecture | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-08-21 |
| 10056482 | Implementation of long-channel thick-oxide devices in vertical transistor flow | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-08-21 |
| 10049945 | Forming a CMOS with dual strained channels | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2018-08-14 |
| 10050143 | Integrated ferroelectric capacitor/ field effect transistor structure | Takashi Ando, Alexander Reznicek | 2018-08-14 |
| 10043825 | Lateral bipolar junction transistor with multiple base lengths | Karthik Balakrishnan, Tak H. Ning, Alexander Reznicek | 2018-08-07 |
| 10043878 | Vertical field-effect-transistors having multiple threshold voltages | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-08-07 |
| 10038053 | Methods for removal of selected nanowires in stacked gate all around architecture | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-07-31 |
| 10020384 | Forming a fin using double trench epitaxy | Veeraraghavan S. Basker, Shogo Mochizuki, Alexander Reznicek | 2018-07-10 |
| 10014371 | Stressed nanowire stack for field effect transistor | Martin M. Frank, Ali Khakifirooz, Alexander Reznicek | 2018-07-03 |
| 10008386 | Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device | Takashi Ando, Hemanth Jagannathan, Choonghyun Lee, Vijay Narayanan | 2018-06-26 |
| 10008596 | Channel-last replacement metal-gate vertical field effect transistor | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-06-26 |
| 10002924 | Devices including high percentage SiGe fins formed at a tight pitch and methods of manufacturing same | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-06-19 |
| 10002794 | Multiple gate length vertical field-effect-transistors | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-06-19 |
| 10002926 | Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy | Kangguo Cheng, Alexander Reznicek | 2018-06-19 |
| 9997409 | Fabricating contacts of a CMOS structure | Lukas Czornomaz, Veeresh V. Deshpande, Vladimir Djara | 2018-06-12 |
| 9991168 | Germanium dual-fin field effect transistor | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-06-05 |
| 9984929 | Fabricating contacts of a CMOS structure | Lukas Czornomaz, Veeresh V. Deshpande, Vladimir Djara | 2018-05-29 |
| 9984871 | Superlattice lateral bipolar junction transistor | Karthik Balakrishnan, Stephen W. Bedell, Bahman Hekmatshoartabari, Alexander Reznicek | 2018-05-29 |
| 9972684 | Compressive strain semiconductor substrates | Karthik Balakrishnan, Nicolas Loubet, Alexander Reznicek | 2018-05-15 |
| 9954116 | Electrostatically enhanced fins field effect transistors | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2018-04-24 |
| 9953973 | Diode connected vertical transistor | Karthik Balakrishnan, Alexander Reznicek | 2018-04-24 |
| 9953884 | Field effect transistor including strained germanium fins | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-04-24 |
| 9947778 | Lateral bipolar junction transistor with controlled junction | Karthik Balakrishnan, Tak H. Ning, Alexander Reznicek | 2018-04-17 |
| 9947775 | Replacement III-V or germanium nanowires by unilateral confined epitaxial growth | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-04-17 |