PH

Pouya Hashemi

IBM: 550 patents #15 of 70,183Top 1%
Globalfoundries: 25 patents #110 of 4,424Top 3%
ET Elpis Technologies: 3 patents #8 of 121Top 7%
Samsung: 2 patents #37,631 of 75,807Top 50%
TE Tessera: 1 patents #207 of 271Top 80%
📍 Purchase, NY: #1 of 53 inventorsTop 2%
🗺 New York: #17 of 115,490 inventorsTop 1%
Overall (All Time): #268 of 4,157,543Top 1%
581
Patents All Time

Issued Patents All Time

Showing 226–250 of 581 patents

Patent #TitleCo-InventorsDate
10242990 Structure featuring ferroelectric capacitance in interconnect level for steep sub-threshold complementary metal oxide semiconductor transistors Takashi Ando, Karthik Balakrishnan, Alexander Reznicek 2019-03-26
10236384 Formation of FinFET junction Kevin K. Chan, Ali Khakifirooz, John A. Ott, Alexander Reznicek 2019-03-19
10236217 Stacked field-effect transistors (FETs) with shared and non-shared gates Takashi Ando, Choonghyun Lee, Alexander Reznicek, Jingyun Zhang 2019-03-19
10229996 Strained stacked nanowire field-effect transistors (FETs) Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek 2019-03-12
10229921 Structure featuring ferroelectric capacitance in interconnect level for steep sub-threshold complementary metal oxide semiconductor transistors Takashi Ando, Karthik Balakrishnan, Alexander Reznicek 2019-03-12
10229917 Thin SRAM cell having vertical transistors Karthik Balakrishnan, Michael A. Guillorn, Alexander Reznicek 2019-03-12
10217818 Method of formation of germanium nanowires on bulk substrates Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2019-02-26
10211341 Tensile strained high percentage silicon germanium alloy FinFETS Bruce B. Doris, Alexander Reznicek, Joshua M. Rubin, Robin M. Schulz 2019-02-19
10211320 Fin cut without residual fin defects Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis 2019-02-19
10199220 Semiconductor structure having insulator pillars and semiconductor material on substrate Alexander Reznicek, Dominic J. Schepis, Kangguo Cheng, Bruce B. Doris 2019-02-05
10177235 Nano-sheet transistors with different threshold voltages Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek 2019-01-08
10177169 Semiconductor device structure with 110-PFET and 111-NFET current flow direction Ali Khakifirooz, Shogo Mochizuki, Alexander Reznicek 2019-01-08
10177168 Fin field-effect transistor having an oxide layer under one or more of the plurality of fins Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis 2019-01-08
10175192 Superhydrophobic electrode and biosensing device using the same Ali Afzali-Ardakani, Karthik Balakrishnan, Stephen W. Bedell, Bahman Hekmatshoartabari, Alexander Reznicek 2019-01-08
10170302 Superlattice lateral bipolar junction transistor Karthik Balakrishnan, Stephen W. Bedell, Bahman Hekmatshoartabari, Alexander Reznicek 2019-01-01
10170660 Digital alloy germanium heterojunction solar cell Karthik Balakrishnan, Stephen W. Bedell, Bahman Hekmatshoartabari, Alexander Reznicek 2019-01-01
10170637 Perfectly symmetric gate-all-around FET on suspended nanowire Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2019-01-01
10170619 Vertical schottky contact FET Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek 2019-01-01
10170587 Heterogeneous source drain region and extension region Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2019-01-01
10170577 Vertical transport FETs having a gradient threshold voltage Choonghyun Lee, Takashi Ando, Jingyun Zhang, Alexander Reznicek 2019-01-01
10170550 Stressed nanowire stack for field effect transistor Martin M. Frank, Ali Khakifirooz, Alexander Reznicek 2019-01-01
10170537 Capacitor structure compatible with nanowire CMOS Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek 2019-01-01
10170469 Vertical field-effect-transistors having multiple threshold voltages Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek 2019-01-01
10170465 Co-fabrication of vertical diodes and fin field effect transistors on the same substrate Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek 2019-01-01
10170464 Compound semiconductor devices having buried resistors formed in buffer layer Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek 2019-01-01