Issued Patents All Time
Showing 251–275 of 581 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10170308 | Fabricating semiconductor devices by cross-linking and removing portions of deposited HSQ | Guy M. Cohen, Sanghoon Lee, Alexander Reznicek | 2019-01-01 |
| 10164092 | Tapered vertical FET having III-V channel | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-12-25 |
| 10158001 | Heterogeneous source drain region and extension region | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2018-12-18 |
| 10147741 | FinFET with stacked faceted S/D epitaxy for improved contact resistance | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-12-04 |
| 10147820 | Germanium condensation for replacement metal gate devices with silicon germanium channel | Takashi Ando, Choonghyun Lee | 2018-12-04 |
| 10141406 | Tensile strained NFET and compressively strained PFET formed on strain relaxed buffer | Karthik Balakrishnan, Keith E. Fogel, Alexander Reznicek | 2018-11-27 |
| 10141309 | Tight pitch inverter using vertical transistors | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-11-27 |
| 10141405 | Lateral bipolar junction transistor with abrupt junction and compound buried oxide | Kevin K. Chan, Tak H. Ning, Alexander Reznicek | 2018-11-27 |
| 10134831 | Deformable and flexible capacitor | Karthik Balakrishnan, Stephen W. Bedell, Alexander Reznicek | 2018-11-20 |
| 10134833 | Multiple work function device using GeOx/TiN cap on work function setting metal | Takashi Ando, Choonghyun Lee | 2018-11-20 |
| 10134882 | Method of junction control for lateral bipolar junction transistor | Kam-Leung Lee, Tak H. Ning, Jeng-Bang Yau | 2018-11-20 |
| 10134917 | Tight pitch vertical transistor EEPROM | Karthik Balakrishnan, Tak H. Ning, Alexander Reznicek | 2018-11-20 |
| 10109737 | Method of forming high-germanium content silicon germanium alloy fins on insulator | Renee T. Mo, John A. Ott, Alexander Reznicek | 2018-10-23 |
| 10090384 | Tensile strained nFET and compressively strained pFET formed on strain relaxed buffer | Karthik Balakrishnan, Keith E. Fogel, Alexander Reznicek | 2018-10-02 |
| 10090307 | Decoupling capacitor on strain relaxation buffer layer | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-10-02 |
| 10083907 | Method and structure for forming on-chip anti-fuse with reduced breakdown voltage | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2018-09-25 |
| 10084064 | Fabrication of strained vertical p-type field effect transistors by bottom condensation | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-09-25 |
| 10084090 | Method and structure of stacked FinFET | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2018-09-25 |
| 10083875 | Vertical transistors having different gate lengths | Karthik Balakrishnan, Tak H. Ning, Alexander Reznicek | 2018-09-25 |
| 10083882 | Nanowire semiconductor device | Karthik Balakrishnan, Sanghoon Lee | 2018-09-25 |
| 10079288 | Contact formation on germanium-containing substrates using hydrogenated silicon | Karthik Balakrishnan, Bahman Hekmatshoartabari, Alexander Reznicek | 2018-09-18 |
| 10079303 | Method to form strained nFET and strained pFET nanowires on a same substrate | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2018-09-18 |
| 10074720 | Digital alloy vertical lamellae finfet with current flow in alloy layer direction | Karthik Balakrishnan, Stephen W. Bedell, Bahman Hekmatshoartabari, Alexander Reznicek | 2018-09-11 |
| 10069008 | Vertical transistor pass gate device | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-09-04 |
| 10062643 | Nickel-silicon fuse for FinFET structures | Kangguo Cheng, Keith E. Fogel, Alexander Reznicek | 2018-08-28 |