Issued Patents All Time
Showing 326–350 of 581 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9887197 | Structure containing first and second vertically stacked nanosheets having different crystallographic orientations | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-02-06 |
| 9876015 | Tight pitch inverter using vertical transistors | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-01-23 |
| 9875896 | Method for forming a strained semiconductor layer including replacing an etchable material formed under the strained semiconductor layer with a dielectric layer | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-01-23 |
| 9870953 | System on chip material co-integration | Takashi Ando, Lukas Czornomaz, Alexander Reznicek | 2018-01-16 |
| 9871140 | Dual strained nanosheet CMOS and methods for fabricating | Karthik Balakrishnan, Michael A. Guillorn, Alexander Reznicek | 2018-01-16 |
| 9865462 | Strain relaxed buffer layers with virtually defect free regions | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-01-09 |
| 9865714 | III-V lateral bipolar junction transistor | Tak H. Ning, Alexander Reznicek | 2018-01-09 |
| 9865737 | Formation of FinFET junction | Kevin K. Chan, Ali Khakifirooz, John A. Ott, Alexander Reznicek | 2018-01-09 |
| 9865511 | Formation of strained fins in a finFET device | Ali Khakifirooz, Alexander Reznicek | 2018-01-09 |
| 9859371 | Semiconductor device including a strain relief buffer | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-01-02 |
| 9859301 | Methods for forming hybrid vertical transistors | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-01-02 |
| 9859367 | Stacked strained and strain-relaxed hexagonal nanowires | Takashi Ando, John A. Ott, Alexander Reznicek | 2018-01-02 |
| 9859369 | Semiconductor device including nanowire transistors with hybrid channels | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2018-01-02 |
| 9859420 | Tapered vertical FET having III-V channel | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2018-01-02 |
| 9859425 | Field-effect transistor with aggressively strained fins | Ali Khakifirooz, Alexander Reznicek | 2018-01-02 |
| 9853166 | Perfectly symmetric gate-all-around FET on suspended nanowire | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2017-12-26 |
| 9847259 | Germanium dual-fin field effect transistor | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-12-19 |
| 9837509 | Semiconductor device including strained finFET | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-12-05 |
| 9837415 | FinFET structures having silicon germanium and silicon fins with suppressed dopant diffusion | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-12-05 |
| 9837414 | Stacked complementary FETs featuring vertically stacked horizontal nanowires | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-12-05 |
| 9837406 | III-V FINFET devices having multiple threshold voltages | Karthik Balakrishnan, Alexander Reznicek | 2017-12-05 |
| 9825122 | Multiple work function device using GeOx/TiN cap on work function setting metal | Takashi Ando, Choonghyun Lee | 2017-11-21 |
| 9818647 | Germanium dual-fin field effect transistor | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-11-14 |
| 9812575 | Contact formation for stacked FinFETs | Alexander Reznicek, Kangguo Cheng, Dominic J. Schepis | 2017-11-07 |
| 9812571 | Tensile strained high percentage silicon germanium alloy FinFETs | Bruce B. Doris, Alexander Reznicek, Joshua M. Rubin, Robin M. Schulz | 2017-11-07 |