Issued Patents All Time
Showing 26–50 of 54 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7900167 | Silicon germanium heterojunction bipolar transistor structure and method | Oleg Gluschenkov, Rajendran Krishnasamy | 2011-03-01 |
| 7750371 | Silicon germanium heterojunction bipolar transistor structure and method | Oleg Gluschenkov, Rajendran Krishnasamy | 2010-07-06 |
| 7713829 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2010-05-11 |
| 7682917 | Disposable metallic or semiconductor gate spacer | Stephen W. Bedell, Michael P. Chudzik, William K. Henson, Naim Moumen, Vijay Narayanan +2 more | 2010-03-23 |
| 7678634 | Local stress engineering for CMOS devices | Qiqing C. Ouyang | 2010-03-16 |
| 7598147 | Method of forming CMOS with Si:C source/drain by laser melting and recrystallization | Yaocheng Liu, Qiqing C. Ouyang, Chun-Yung Sung | 2009-10-06 |
| 7511317 | Porous silicon for isolation region formation and related structure | Thomas N. Adam, Stephen W. Bedell, Joel P. de Souza, Thomas A. Wallner | 2009-03-31 |
| 7476914 | Methods to improve the SiGe heterojunction bipolar device performance | Omer H. Dokumaci, Gregory G. Freeman, Marwan H. Khater, Rajendran Krishnasamy | 2009-01-13 |
| 7442595 | Bipolar transistor with collector having an epitaxial Si:C region | Gregory G. Freeman, Marwan H. Khater, Rajendran Krishnasamy, Andreas D. Stricker | 2008-10-28 |
| 7288827 | Self-aligned mask formed utilizing differential oxidation rates of materials | Huajie Chen, Gregory G. Freeman, Andreas D. Stricker, Jae-Sung Rieh | 2007-10-30 |
| 7173274 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2007-02-06 |
| 7170083 | Bipolar transistor with collector having an epitaxial Si:C region | Gregory G. Freeman, Marwan H. Khater, Rajendran Krishnasamy, Andreas D. Stricker | 2007-01-30 |
| 7144787 | Methods to improve the SiGe heterojunction bipolar device performance | Omer H. Dokumaci, Gregory G. Freeman, Marwan H. Khater, Rajendran Krishnasamy | 2006-12-05 |
| 7119416 | Bipolar transistor structure with self-aligned raised extrinsic base and methods | Thomas N. Adam, Kevin K. Chan, Alvin J. Joseph, Marwan H. Khater, Qizhi Liu +1 more | 2006-10-10 |
| 7037798 | Bipolar transistor structure with self-aligned raised extrinsic base and methods | Thomas N. Adam, Kevin K. Chan, Alvin J. Joseph, Marwan H. Khater, Qizhi Liu +1 more | 2006-05-02 |
| 6982442 | Structure and method for making heterojunction bipolar transistor having self-aligned silicon-germanium raised extrinsic base | Kevin K. Chan, Marwan H. Khater, Panda Siddhartha | 2006-01-03 |
| 6977398 | C implants for improved SiGe bipolar yield | Douglas D. Coolbaugh | 2005-12-20 |
| 6927476 | Bipolar device having shallow junction raised extrinsic base and method for making the same | Gregory G. Freeman, Seshadri Subbanna, Basanth Jagannathan, Shwu-Jen Jeng, Kenneth J. Stein +1 more | 2005-08-09 |
| 6869852 | Self-aligned raised extrinsic base bipolar transistor structure and method | Alvin J. Joseph, Qizhi Liu, BethAnn Rainey | 2005-03-22 |
| 6864560 | Bipolar transistor structure with a shallow isolation extension region providing reduced parasitic capacitance | Marwan H. Khater, Jae-Sung Rieh, Andreas D. Stricker, Gregory G. Freeman | 2005-03-08 |
| 6844225 | Self-aligned mask formed utilizing differential oxidation rates of materials | Huajie Chen, Gregory G. Freeman, Andreas D. Stricker, Jae-Sung Rieh | 2005-01-18 |
| 6815802 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglass Duane Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2004-11-09 |
| 6780695 | BiCMOS integration scheme with raised extrinsic base | Huajie Chen, Seshadri Subbanna, Basanth Jagannathan, Gregory G. Freeman, David C. Ahlgren +3 more | 2004-08-24 |
| 6744079 | Optimized blocking impurity placement for SiGe HBTs | Basanth Jagannathan, Alvin J. Joseph, Xuefeng Liu, Ryan Wuthrich | 2004-06-01 |
| 6720590 | C implants for improved SiGe bipolar yield | Douglas D. Coolbaugh | 2004-04-13 |