Issued Patents All Time
Showing 76–100 of 137 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7217949 | Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI) | Kevin K. Chan, Kern Rim, Leathen Shi | 2007-05-15 |
| 7205604 | Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof | Qiqing C. Ouyang | 2007-04-17 |
| 7183576 | Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD | Basanth Jagannathan, Alfred Grill, Bernard S. Meyerson, John A. Ott | 2007-02-27 |
| 7173274 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan +4 more | 2007-02-06 |
| 7145167 | High speed Ge channel heterostructures for field effect devices | — | 2006-12-05 |
| 7138697 | Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector | Gabriel Dehlinger, Alfred Grill, Steven J. Koester, Qiging Ouyang, Jeremy D. Schaub | 2006-11-21 |
| 7098057 | Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate | Qiping C. Ouyang | 2006-08-29 |
| 7091095 | Dual strain-state SiGe layers for microelectronics | — | 2006-08-15 |
| 7083998 | Si/SiGe optoelectronic integrated circuits | Khalid EzzEldin Ismail, Steven J. Koester, Bernd-Ulrich Klepser | 2006-08-01 |
| 7084431 | High speed composite p-channel Si/SiGe heterostructure for field effect devices | Richard Hammond, Khalid EzzEldin Ismail, Steven J. Koester, Patricia M. Mooney, John A. Ott | 2006-08-01 |
| 7074686 | Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications | Stephen W. Bedell, Keith E. Fogel, Steven J. Koester, Devendra K. Sadana | 2006-07-11 |
| 7067855 | Semiconductor structure having an abrupt doping profile | Frank Cardone, Khalid EzzEldin Ismail | 2006-06-27 |
| 7038277 | Transferable device-containing layer for silicon-on-insulator applications | Alfred Grill, Dean A. Herman, Jr., Katherine L. Saenger | 2006-05-02 |
| 6972250 | Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device | Cyril Cabral, Jr., Roy A. Carruthers, Kevin K. Chan, Guy M. Cohen, Steven J. Koester +2 more | 2005-12-06 |
| 6963078 | Dual strain-state SiGe layers for microelectronics | — | 2005-11-08 |
| 6949761 | Structure for and method of fabricating a high-mobility field-effect transistor | Steven J. Koester, Qiqing C. Ouyang | 2005-09-27 |
| 6943407 | Low leakage heterojunction vertical transistors and high performance devices thereof | Qiqing C. Ouyang | 2005-09-13 |
| 6927414 | High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof | Qiqing C. Ouyang | 2005-08-09 |
| 6908866 | Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD | Basanth Jagannathan, Alfred Grill, Bernard S. Meyerson, John A. Ott | 2005-06-21 |
| 6909186 | High performance FET devices and methods therefor | — | 2005-06-21 |
| 6890835 | Layer transfer of low defect SiGe using an etch-back process | David R. DiMilia, Lijuan Huang | 2005-05-10 |
| 6881259 | In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films | David C. Ahlgren, Basanth Jagannathan, Ryan Wuthrich | 2005-04-19 |
| 6875279 | Single reactor, multi-pressure chemical vapor deposition for semiconductor devices | Basanth Jagannathan, Ryan Wuthrich | 2005-04-05 |
| 6870232 | Scalable MOS field effect transistor | Kevin K. Chan, Khalid EzzEldin Ismail, Stephen A. Rishton, Katherine L. Saenger | 2005-03-22 |
| 6858502 | High speed composite p-channel Si/SiGe heterostructure for field effect devices | Richard Hammond, Khalid EzzEldin Ismail, Steven J. Koester, Patricia M. Mooney, John A. Ott | 2005-02-22 |