Issued Patents All Time
Showing 51–75 of 137 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7704815 | Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques | Michael A. Cobb, Philip A. Saunders, Leathen Shi | 2010-04-27 |
| 7705345 | High performance strained silicon FinFETs device and method for forming same | Stephen W. Bedell, Kevin K. Chan, Dureseti Chidambarrao, Silke H. Christianson, Anthony G. Domenicucci +4 more | 2010-04-27 |
| 7679121 | Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof | Qiqing C. Ouyang | 2010-03-16 |
| 7678638 | Metal gated ultra short MOSFET devices | Bruce B. Doris, Meikei Ieong, Jing Wang | 2010-03-16 |
| 7652288 | Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on Si by UHV-CVD | Basanth Jaqannathan, Alfred Grill, Bernard S. Meyerson, John A. Ott | 2010-01-26 |
| 7608496 | High speed GE channel heterostructures for field effect devices | — | 2009-10-27 |
| 7569442 | High speed lateral heterojunction MISFETS realized by 2-dimensional bandgap engineering and methods thereof | Qiqing C. Ouyang | 2009-08-04 |
| 7563657 | High performance FET devices and methods thereof | — | 2009-07-21 |
| 7547930 | High performance FET devices and methods thereof | — | 2009-06-16 |
| 7510916 | High performance FET devices and methods thereof | — | 2009-03-31 |
| 7510904 | Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector | Gabriel Dehlinger, Alfred Grill, Steven J. Koester, Qiqing C. Ouyang, Jeremy D. Schaub | 2009-03-31 |
| 7507989 | Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI) | Kevin K. Chan, Kern Rim, Leathen Shi | 2009-03-24 |
| 7494861 | Method for metal gated ultra short MOSFET devices | Bruce B. Doris, Meikei Ieong, Jing Wang | 2009-02-24 |
| 7453113 | Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof | Qiqing C. Ouyang | 2008-11-18 |
| 7445977 | Method of creating defect free high Ge content (> 25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques | Michael A. Cobb, Philip A. Saunders, Leathen Shi | 2008-11-04 |
| 7429748 | High speed GE channel heterostructures for field effect devices | — | 2008-09-30 |
| 7427773 | Layer transfer of low defect SiGe using an etch-back process | David R. DiMilia, Lijuan Huang | 2008-09-23 |
| 7411214 | High performance FET devices and methods thereof | — | 2008-08-12 |
| 7405422 | Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD | Basanth Jaqannathan, Alfred Grill, Bernard S. Meyerson, John A. Ott | 2008-07-29 |
| 7393735 | Structure for and method of fabricating a high-mobility field-effect transistor | Steven J. Koester, Qiqing C. Ouyang | 2008-07-01 |
| 7387925 | Integration of strained Ge into advanced CMOS technology | Huiling Shang, Meikei Ieong, Kathryn Guarini | 2008-06-17 |
| 7358122 | High performance FET devices and methods thereof | — | 2008-04-15 |
| 7348629 | Metal gated ultra short MOSFET devices | Bruce B. Doris, Meikei Ieong, Jing Wang | 2008-03-25 |
| 7244958 | Integration of strained Ge into advanced CMOS technology | Huiling Shang, Meikei Ieong, Kathryn Guarini | 2007-07-17 |
| 7235812 | Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques | Michael A. Cobb, Philip A. Saunders, Leathen Shi | 2007-06-26 |