HY

Hongwen Yan

IBM: 38 patents #2,506 of 70,183Top 4%
FS Freeescale Semiconductor: 1 patents #2,021 of 3,767Top 55%
Globalfoundries: 1 patents #2,221 of 4,424Top 55%
Infineon Technologies Ag: 1 patents #4,439 of 7,486Top 60%
TL Tokyo Electron Limited: 1 patents #3,538 of 5,567Top 65%
📍 Somers, NY: #24 of 237 inventorsTop 15%
🗺 New York: #2,725 of 115,490 inventorsTop 3%
Overall (All Time): #81,818 of 4,157,543Top 2%
39
Patents All Time

Issued Patents All Time

Showing 26–39 of 39 patents

Patent #TitleCo-InventorsDate
7749830 CMOS (complementary metal oxide semiconductor) devices having metal gate NFETS and poly-silicon gate PFETS Bruce B. Doris, William K. Henson, Richard S. Wise 2010-07-06
7691701 Method of forming gate stack and structure thereof Michael P. Belyansky, Siddarth A. Krishnan, Unoh Kwon, Naim Moumen, Ravikumar Ramachandran +3 more 2010-04-06
7671421 CMOS structure and method for fabrication thereof using multiple crystallographic orientations and gate materials Tze-Chiang Chen, Meikei Ieong, Rajarao Jammy, Mukesh V. Khare, Chun-Yung Sung +2 more 2010-03-02
7438822 Apparatus and method for shielding a wafer from charged particles during plasma etching Brian L. Ji, Siddhartha Panda, Richard S. Wise, Bomy Chen 2008-10-21
7435652 Integration schemes for fabricating polysilicon gate MOSFET and high-K dielectric metal gate MOSFET Tze-Chiang Chen, Bruce B. Doris, Rangarajan Jagannathan, Qingyun Yang, Ying Zhang 2008-10-14
7329602 Wiring structure for integrated circuit with reduced intralevel capacitance Richard S. Wise, Bomy Chen, Mark C. Hakey 2008-02-12
7081393 Reduced dielectric constant spacer materials integration for high speed logic gates Michael P. Belyansky, Joyce C. Liu, Hsing-Jen Wann, Richard S. Wise 2006-07-25
7077903 Etch selectivity enhancement for tunable etch resistant anti-reflective layer Katherina Babich, Scott D. Halle, David V. Horak, Arpan Mahorowala, Wesley C. Natzle +1 more 2006-07-18
6908806 Gate metal recess for oxidation protection and parasitic capacitance reduction Haining Yang, Ramachandra Divakaruni, Oleg Gluschenkov, Rajeev Malik, Ravikumar Ramachandran 2005-06-21
6838347 Method for reducing line edge roughness of oxide material using chemical oxide removal Joyce C. Liu, Wesley C. Natzle, Richard S. Wise, Bidan Zhang 2005-01-04
6541320 Method to controllably form notched polysilicon gate structures Jeffrey J. Brown, Richard S. Wise, Qingyun Yang, Chienfan Yu 2003-04-01
6509219 Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etch Len Yuan Tsou, Qingyun Yang, Chienfan Yu 2003-01-21
6345399 Hard mask process to prevent surface roughness for selective dielectric etching Paul C. Jamison, Tina Wagner, Richard S. Wise 2002-02-12
6294102 Selective dry etch of a dielectric film Delores Bennett, James P. Norum, Chienfan Yu 2001-09-25