Issued Patents All Time
Showing 101–119 of 119 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9455198 | Methods of removing fins so as to form isolation structures on products that include FinFET semiconductor devices | Hong Yu, Hongliang Shen, Zhenyu Hu, Lun Zhao, Richard J. Carter | 2016-09-27 |
| 9431424 | Method for creating metal gate resistor in FDSOL and resulting device | — | 2016-08-30 |
| 9419139 | Nitride layer protection between PFET source/drain regions and dummy gate during source/drain etch | Hongxiang Mo, Qi Zhang, Byoung-Gi Min, Jeasung Park | 2016-08-16 |
| 9419126 | Integrated circuits and methods for fabricating integrated circuits with active area protection | Xiaodong Yang, Jin Ping Liu, Yanxiang Liu | 2016-08-16 |
| 9419015 | Method for integrating thin-film transistors on an isolation region in an integrated circuit and resulting device | Changyong Xiao, Min-hwa Chi | 2016-08-16 |
| 9418899 | Method of multi-WF for multi-Vt and thin sidewall deposition by implantation for gate-last planar CMOS and FinFET technology | Yan Ping SHEN, Min-hwa Chi, Weihua Tong, Haiting Wang | 2016-08-16 |
| 9379209 | Selectively forming a protective conductive cap on a metal gate electrode | Xiuyu Cai, Jiajun Mao, Min-hwa Chi | 2016-06-28 |
| 9379104 | Method to make gate-to-body contact to release plasma induced charging | — | 2016-06-28 |
| 9343371 | Fabricating fin structures with doped middle portions | Jin Ping Liu | 2016-05-17 |
| 9337306 | Multi-phase source/drain/gate spacer-epi formation | Jianwei Peng, Hong Yu, Zhao Lun | 2016-05-10 |
| 9299608 | T-shaped contacts for semiconductor device | Changyong Xiao, Min-hwa Chi | 2016-03-29 |
| 9275906 | Method for increasing a surface area of epitaxial structures in a mixed N/P type fin semiconductor structure by forming multiple epitaxial heads | Xiang Hu, Changyong Xiao, Wanxun He | 2016-03-01 |
| 9263516 | Product comprised of FinFET devices with single diffusion break isolation structures | Changyong Xiao, Wanxun He, Hongliang Shen | 2016-02-16 |
| 9171752 | Product comprised of FinFET devices with single diffusion break isolation structures, and methods of making such a product | Changyong Xiao, Wanxun He, Hongliang Shen | 2015-10-27 |
| 9142640 | Containment structure for epitaxial growth in non-planar semiconductor structure | Xiaodong Yang, Yanxiang Liu, Jin Ping Liu | 2015-09-22 |
| 9123773 | T-shaped single diffusion barrier with single mask approach process flow | Hongliang Shen, FangYu Wu, Haigou Huang, Changyong Xiao, Wanxum He | 2015-09-01 |
| 9123772 | FinFET fabrication method | Wanxun He, Hongliang Shen | 2015-09-01 |
| 9087720 | Methods for forming FinFETs with reduced series resistance | Changyong Xiao, Manfred Eller, Wanxun He, Jie Chen | 2015-07-21 |
| 7545008 | Complementary metal-oxide-semiconductor transistor structure for high density and high performance integrated circuits | Philip Chan, Man Sun John Chan, Shengdong Zhang | 2009-06-09 |