Issued Patents All Time
Showing 126–150 of 175 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9190486 | Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance | Ruilong Xie, Xunyuan Zhang | 2015-11-17 |
| 9184263 | Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices | Ajey Poovannummoottil Jacob, Daniel T. Pham, Mark V. Raymond, Christopher M. Prindle, Catherine B. Labelle +2 more | 2015-11-10 |
| 9184162 | FinFET integrated circuits and methods for their fabrication | Murat Kerem Akarvardar, Ajey Poovannummoottil Jacob | 2015-11-10 |
| 9165836 | Methods of forming replacement gate structures using a gate height register process to improve gate height uniformity and the resulting integrated circuit products | Ruilong Xie, Michael Wedlake, Ali Khakifirooz, Kangguo Cheng | 2015-10-20 |
| 9159617 | Structure and method of forming silicide on fins | Xunyuan Zhang | 2015-10-13 |
| 9153498 | Methods of forming semiconductor device with self-aligned contact elements and the resulting devices | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2015-10-06 |
| 9147748 | Methods of forming replacement spacer structures on semiconductor devices | Ruilong Xie, Ajey Poovannummoottil Jacob, Andreas Knorr, Christopher M. Prindle | 2015-09-29 |
| 9142651 | Methods of forming a FinFET semiconductor device so as to reduce punch-through leakage currents and the resulting device | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2015-09-22 |
| 9129987 | Replacement low-K spacer | Jing Wan, Jin Ping Liu, Guillaume Bouche, Andy Wei, Lakshmanan H. Vanamurthy +3 more | 2015-09-08 |
| 9117908 | Methods of forming replacement gate structures for semiconductor devices and the resulting semiconductor products | Ruilong Xie, Andy Wei | 2015-08-25 |
| 9117877 | Methods of forming a dielectric cap layer on a metal gate structure | Ruilong Xie, Jin Cho, John A. Iacoponi | 2015-08-25 |
| 9093401 | Achieving greater planarity between upper surfaces of a layer and a conductive structure residing therein | Xunyuan Zhang | 2015-07-28 |
| 9082852 | LDMOS FinFET device using a long channel region and method of manufacture | Qing Liu, Ruilong Xie, Chun-Chen Yeh | 2015-07-14 |
| 9076816 | Method and device for self-aligned contact on a non-recessed metal gate | Xunyuan Zhang, Hoon Kim | 2015-07-07 |
| 9070711 | Methods of forming cap layers for semiconductor devices with self-aligned contact elements and the resulting devices | Ruilong Xie, Larry Zhao | 2015-06-30 |
| 9070742 | FinFet integrated circuits with uniform fin height and methods for fabricating the same | Ruilong Xie | 2015-06-30 |
| 9064948 | Methods of forming a semiconductor device with low-k spacers and the resulting device | Ruilong Xie, Xunyuan Zhang | 2015-06-23 |
| 9064890 | Methods of forming isolation material on FinFET semiconductor devices and the resulting devices | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2015-06-23 |
| 9029920 | Semiconductor devices and methods of fabrication with reduced gate and contact resistances | Ruilong Xie, Vimal Kamineni, Kangguo Cheng, Ali Khakifirooz | 2015-05-12 |
| 9018711 | Selective growth of a work-function metal in a replacement metal gate of a semiconductor device | Hoon Kim, Xunyuan Zhang | 2015-04-28 |
| 9000537 | FinFET devices having recessed liner materials to define different fin heights | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2015-04-07 |
| 8987094 | FinFET integrated circuits and methods for their fabrication | Murat Kerem Akarvardar, Ajey Poovannummoottil Jacob | 2015-03-24 |
| 8962413 | Methods of forming spacers on FinFETs and other semiconductor devices | Ruilong Xie, William J. Taylor, Jr. | 2015-02-24 |
| 8946075 | Methods of forming semiconductor device with self-aligned contact elements and the resulting devices | Ruilong Xie, John A. Iacoponi | 2015-02-03 |
| 8946793 | Integrated circuits having replacement gate structures and methods for fabricating the same | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2015-02-03 |