Issued Patents All Time
Showing 151–175 of 175 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8940633 | Methods of forming semiconductor device with self-aligned contact elements and the resulting devices | Ruilong Xie, John A. Iacoponi | 2015-01-27 |
| 8941156 | Self-aligned dielectric isolation for FinFET devices | Marc A. Bergendahl, Kangguo Cheng, David V. Horak, Ali Khakifirooz, Shom Ponoth +4 more | 2015-01-27 |
| 8936979 | Semiconductor devices having improved gate height uniformity and methods for fabricating same | Ruilong Xie, Andy Wei, Robert J. Miller | 2015-01-20 |
| 8928048 | Methods of forming semiconductor device with self-aligned contact elements and the resulting device | Ruilong Xie | 2015-01-06 |
| 8921191 | Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same | Ruilong Xie, Ali Khakifirooz, Kangguo Cheng | 2014-12-30 |
| 8906754 | Methods of forming a semiconductor device with a protected gate cap layer and the resulting device | Daniel T. Pham, Balasubramanian Pranatharthiharan, Pranita Kulkarni | 2014-12-09 |
| 8900941 | Methods of forming spacers on FinFETs and other semiconductor devices | Ruilong Xie, William J. Taylor, Jr. | 2014-12-02 |
| 8883020 | Achieving greater planarity between upper surfaces of a layer and a conductive structure residing therein | Xunyuan Zhang | 2014-11-11 |
| 8883631 | Methods of forming conductive structures using a sacrificial material during a metal hard mask removal process | Kunaljeet Tanwar, Xunyuan Zhang | 2014-11-11 |
| 8883623 | Facilitating gate height uniformity and inter-layer dielectric protection | Ruilong Xie, Pranatharthiharan Haran Balasubramanian, Shom Ponoth | 2014-11-11 |
| 8871582 | Methods of forming a semiconductor device with a protected gate cap layer and the resulting device | Daniel T. Pham, Balasubramanian Pranatharthiharan, Pranita Kulkarni | 2014-10-28 |
| 8846477 | Methods of forming 3-D semiconductor devices using a replacement gate technique and a novel 3-D device | Ruilong Xie | 2014-09-30 |
| 8841711 | Methods of increasing space for contact elements by using a sacrificial liner and the resulting device | Ruilong Xie, Ali Khakifirooz, Kangguo Cheng | 2014-09-23 |
| 8835262 | Methods of forming bulk FinFET devices by performing a recessing process on liner materials to define different fin heights and FinFET devices with such recessed liner materials | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2014-09-16 |
| 8815742 | Methods of forming bulk FinFET semiconductor devices by performing a liner recessing process to define fin heights and FinFET devices with such a recessed liner | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2014-08-26 |
| 8809920 | Prevention of fin erosion for semiconductor devices | Ali Khakifirooz, Thomas N. Adam, Kangguo Cheng, Shom Ponoth, Alexander Reznicek +2 more | 2014-08-19 |
| 8753970 | Methods of forming semiconductor devices with self-aligned contacts and the resulting devices | Ruilong Xie, Ponoth Shom, Balasubramanian Pranatharthiharan, Robert J. Miller | 2014-06-17 |
| 8748309 | Integrated circuits with improved gate uniformity and methods for fabricating same | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2014-06-10 |
| 8735272 | Integrated circuit having a replacement gate structure and method for fabricating the same | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2014-05-27 |
| 8703557 | Methods of removing dummy fin structures when forming finFET devices | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2014-04-22 |
| 8691696 | Methods for forming an integrated circuit with straightened recess profile | Xunyuan Zhang, Ruilong Xie, Errol Todd Ryan, John A. Iacoponi | 2014-04-08 |
| 8580634 | Methods of forming 3-D semiconductor devices with a nanowire gate structure wherein the nanowire gate structure is formed prior to source/drain formation | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2013-11-12 |
| 8551843 | Methods of forming CMOS semiconductor devices | Ruilong Xie | 2013-10-08 |
| 8541274 | Methods of forming 3-D semiconductor devices with a nanowire gate structure wherein the nanowire gate structure is formed after source/drain formation | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2013-09-24 |
| 8524592 | Methods of forming semiconductor devices with self-aligned contacts and low-k spacers and the resulting devices | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2013-09-03 |