HH

Haigou Huang

Globalfoundries: 59 patents #33 of 4,424Top 1%
GU Globalfoundries U.S.: 6 patents #102 of 665Top 20%
📍 Rexford, NY: #4 of 148 inventorsTop 3%
🗺 New York: #1,217 of 115,490 inventorsTop 2%
Overall (All Time): #33,783 of 4,157,543Top 1%
65
Patents All Time

Issued Patents All Time

Showing 26–50 of 65 patents

Patent #TitleCo-InventorsDate
10325819 Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET device Jinsheng Gao, Daniel Jaeger, Michael V. Aquilino, Patrick Carpenter, Jessica Dechene +2 more 2019-06-18
10269654 Methods, apparatus and system for replacement contact for a finFET device Jinsheng Gao, Daniel Jaeger, Michael V. Aquilino, Patrick Carpenter, Jessica Dechene +2 more 2019-04-23
10262942 Method of forming cobalt contact module and cobalt contact module formed thereby Qiang Fang, Shafaat Ahmed, Changhong Wu, Dinesh R. Koli 2019-04-16
10256089 Replacement contact cuts with an encapsulated low-K dielectric Huy Cao, Jinsheng Gao, Tai Fong Chao 2019-04-09
10229999 Methods of forming upper source/drain regions on a vertical transistor device Xusheng Wu, John H. Zhang, Jiehui Shu 2019-03-12
10217846 Vertical field effect transistor formation with critical dimension control Ruilong Xie, Steven Bentley, Min Gyu Sung, Chanro Park, Steven R. Soss +8 more 2019-02-26
10211315 Vertical field-effect transistor having a dielectric spacer between a gate electrode edge and a self-aligned source/drain contact Hui Zang 2019-02-19
10211103 Advanced structure for self-aligned contact and method for producing the same Dinesh R. Koli, Yuan Zhou, Xingzhao Shi, Chih-Chiang Chang, Tai Fong Chao 2019-02-19
10204784 Methods of forming features on integrated circuit products Jinsheng Gao, Hui Zang 2019-02-12
10204797 Methods, apparatus, and system for reducing step height difference in semiconductor devices Jinsheng Gao, Daniel Jaeger, Michael V. Aquilino, Patrick Carpenter, Junsic Hong +1 more 2019-02-12
10176995 Methods, apparatus and system for gate cut process using a stress material in a finFET device Xusheng Wu 2019-01-08
10103238 Nanosheet field-effect transistor with full dielectric isolation Hui Zang, Tek Po Rinus Lee, Ruilong Xie, Min Gyu Sung, Chanro Park 2018-10-16
10090169 Methods of forming integrated circuit structures including opening filled with insulator in metal gate Hui Zang 2018-10-02
10062772 Preventing bridge formation between replacement gate and source/drain region through STI structure Xusheng Wu, Xintuo Dai 2018-08-28
10056458 Siloxane and organic-based MOL contact patterning Chang Ho Maeng, Andy Wei, Anthony Ozzello, Bharat Krishnan, Guillaume Bouche +9 more 2018-08-21
10014298 Method of forming field effect transistors with replacement metal gates and contacts and resulting structure Hui Zang, Xiaofeng Qiu 2018-07-03
9991363 Contact etch stop layer with sacrificial polysilicon layer Jinsheng Gao, Haifeng Sheng, Jinping Liu, Huy Cao, Hui Zang 2018-06-05
9991361 Methods for performing a gate cut last scheme for FinFET semiconductor devices Xintuo Dai, Xusheng Wu 2018-06-05
9966272 Methods for nitride planarization using dielectric Haifeng Sheng, Tai Fong Chao, Jiehui Shu, Jinping Liu, Xingzhao Shi +1 more 2018-05-08
9935012 Methods for forming different shapes in different regions of the same layer Jinsheng Gao 2018-04-03
9922972 Embedded silicon carbide block patterning Xiaofeng Qiu, Chang Ho Maeng 2018-03-20
9916982 Dielectric preservation in a replacement gate process Xusheng Wu, John H. Zhang 2018-03-13
9911736 Method of forming field effect transistors with replacement metal gates and contacts and resulting structure Hui Zang, Xiaofeng Qiu 2018-03-06
9865543 Structure and method for inhibiting cobalt diffusion Qiang Fang, Stan Tsai, John H. Zhang, Xingzhao Shi, Tai Fong Chao 2018-01-09
9837553 Vertical field effect transistor Xusheng Wu, John H. Zhang 2017-12-05