Issued Patents All Time
Showing 201–213 of 213 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7329571 | Technique for providing multiple stress sources in NMOS and PMOS transistors | Jan Hoentschel, Manfred Horstmann, Thorsten Kammler | 2008-02-12 |
| 7316975 | Method of forming sidewall spacers | Markus Lenski, Wolfgang Buchholtz, Michael Raab | 2008-01-08 |
| 7180136 | Biased, triple-well fully depleted SOI structure | Derick J. Wristers, Mark B. Fuselier | 2007-02-20 |
| 7138320 | Advanced technique for forming a transistor having raised drain and source regions | Ralf van Bentum, Scott Luning | 2006-11-21 |
| 7129142 | Method of forming doped regions in the bulk substrate of an SOI substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising same | Derick J. Wristers, Mark B. Fuselier | 2006-10-31 |
| 6919236 | Biased, triple-well fully depleted SOI structure, and various methods of making and operating same | Derick J. Wristers, Mark B. Fuselier | 2005-07-19 |
| 6884702 | Method of making an SOI semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate | Derick J. Wristers, Mark B. Fuselier | 2005-04-26 |
| 6876037 | Fully-depleted SOI device | Derick J. Wristers, Mark B. Fuselier | 2005-04-05 |
| 6864516 | SOI MOSFET junction degradation using multiple buried amorphous layers | Akif Sultan, David Wu | 2005-03-08 |
| 6780686 | Doping methods for fully-depleted SOI structures, and device comprising the resulting doped regions | Derick J. Wristers, Mark B. Fuselier | 2004-08-24 |
| 6737332 | Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making same | Mark B. Fuselier, Derick J. Wristers | 2004-05-18 |
| 6583016 | Doped spacer liner for improved transistor performance | Mark B. Fuselier, Ping-Chin Yeh | 2003-06-24 |
| 6506654 | Source-side stacking fault body-tie for partially-depleted SOI MOSFET hysteresis control | Witold P. Maszara, Mario M. Pelella | 2003-01-14 |