Issued Patents All Time
Showing 51–75 of 90 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9076732 | Method to prepare semi-conductor device comprising a selective etching of a silicium—germanium layer | Yannick Le Tiec, Laurent Grenouillet, Nicolas Posseme | 2015-07-07 |
| 9070709 | Method for producing a field effect transistor with implantation through the spacers | Nicolas Posseme, Laurent Grenouillet, Yannick Le Tiec, Nicolas Loubet | 2015-06-30 |
| 9059041 | Dual channel hybrid semiconductor-on-insulator semiconductor devices | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Qing Liu, Laurent Grenouillet +1 more | 2015-06-16 |
| 8994142 | Field effect transistor with offset counter-electrode contact | Laurent Grenouillet, Yannick Le Tiec, Nicolas Posseme | 2015-03-31 |
| 8987854 | Microelectronic device with isolation trenches extending under an active area | Laurent Grenouillet, Yannick Le Tiec, Romain Wacquez | 2015-03-24 |
| 8980702 | Method of making a transistor | Heimanu Niebojewski, Yves Morand | 2015-03-17 |
| 8969966 | Defective P-N junction for backgated fully depleted silicon on insulator MOSFET | Kangguo Cheng, Bruce B. Doris, Laurent Grenouillet, Ali Khakifirooz, Yannick Le Tiec +1 more | 2015-03-03 |
| 8969148 | Method for producing a transistor structure with superimposed nanowires and with a surrounding gate | Sylvain Barraud, Laurent Grenouillet | 2015-03-03 |
| 8962399 | Method of making a semiconductor layer having at least two different thicknesses | Yves Morand, Heimanu Niebojewski | 2015-02-24 |
| 8890219 | UTBB CMOS imager having a diode junction in a photosensitive area thereof | Laurent Grenouillet | 2014-11-18 |
| 8877618 | Method for producing a field effect transistor with a SiGe channel by ion implantation | Laurent Grenouillet, Yannick Le Tiec, Romain Wacquez, Olivier Faynot | 2014-11-04 |
| 8853785 | Integrated circuit with electrostatically coupled MOS transistors and method for producing such an integrated circuit | Emmanuel Augendre, Laurent Clavelier, Perrine Batude | 2014-10-07 |
| 8735259 | Method of producing insulation trenches in a semiconductor on insulator substrate | Yannick Le Tiec, Laurent Grenouillet | 2014-05-27 |
| 8729577 | Light-emitting device with head-to-tail P-type and N-type transistors | Laurent Grenouillet | 2014-05-20 |
| 8722499 | Method for fabricating a field effect device with weak junction capacitance | Laurent Grenouillet, Yannick Le Tiec, Nicolas Posseme | 2014-05-13 |
| 8703550 | Dual shallow trench isolation liner for preventing electrical shorts | Bruce B. Doris, Shom Ponoth, Prasanna Khare, Qing Liu, Nicolas Loubet | 2014-04-22 |
| 8603872 | Field effect device provided with a localized dopant diffusion barrier area and fabrication method | Laurent Grenouillet, Yannick Le Tiec, Nicolas Posseme | 2013-12-10 |
| 8399316 | Method for making asymmetric double-gate transistors | Olivier Thomas, Olivier Rozeau, Thierry Poiroux | 2013-03-19 |
| 8324057 | Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate | Olivier Thomas, Olivier Rozeau, Thierry Poiroux | 2012-12-04 |
| 8232168 | Method for making asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate | Olivier Thomas, Olivier Rozeau, Thierry Poiroux | 2012-07-31 |
| 8183630 | Circuit with transistors integrated in three dimensions and having a dynamically adjustable threshold voltage VT | Perrine Batude, Laurent Clavelier, Marie-Anne Jaud, Olivier Thomas | 2012-05-22 |
| 8115503 | Device for measuring metal/semiconductor contact resistivity | — | 2012-02-14 |
| 8116118 | Memory cell provided with dual-gate transistors, with independent asymmetric gates | Olivier Thomas | 2012-02-14 |
| 8105906 | Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate | Olivier Thomas, Olivier Rozeau, Thierry Poiroux | 2012-01-31 |
| 8021934 | Method for making a transistor with metallic source and drain | Thierry Poiroux, Bernard Previtali | 2011-09-20 |