Issued Patents All Time
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10914703 | Computer implemented method for determining intrinsic parameter in a stacked nanowires MOSFET | Marie-Anne Jaud, Joris LACORD, Sébastien Martinie, Thierry Poiroux | 2021-02-09 |
| 10777701 | Photosensitive detector with self-aligned 3D junction and gate | Lina Kadura, Laurent Grenouillet, Alexei Tchelnokov | 2020-09-15 |
| 10290667 | Front-illuminated photosensitive logic cell | Laurent Grenouillet | 2019-05-14 |
| 9841657 | CMOS photonic inverter | Laurent Grenouillet | 2017-12-12 |
| 9761583 | Manufacturing of self aligned interconnection elements for 3D integrated circuits | Claire Fenouillet-Beranger, Bernard Previtali | 2017-09-12 |
| 9235668 | Computer implemented method for calculating a charge density at a gate interface of a double gate transistor | Thierry Poiroux, Marie-Anne Jaud, Sébastien Martinie | 2016-01-12 |
| 8399316 | Method for making asymmetric double-gate transistors | Maud Vinet, Olivier Thomas, Thierry Poiroux | 2013-03-19 |
| 8324057 | Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate | Maud Vinet, Olivier Thomas, Thierry Poiroux | 2012-12-04 |
| 8232168 | Method for making asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate | Maud Vinet, Olivier Thomas, Thierry Poiroux | 2012-07-31 |
| 8105906 | Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate | Maud Vinet, Olivier Thomas, Thierry Poiroux | 2012-01-31 |