Issued Patents All Time
Showing 26–50 of 55 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8586456 | Use of CL2 and/or HCL during silicon epitaxial film formation | Zhiyuan Ye, Xiaowei Li, Ali Zojaji, Nicholas C. Dalida, Jinsong Tang +2 more | 2013-11-19 |
| 8394196 | Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon | — | 2013-03-12 |
| 8207023 | Methods of selectively depositing an epitaxial layer | Zhiyuan Ye, Saurabh Chopra | 2012-06-26 |
| 8029620 | Methods of forming carbon-containing silicon epitaxial layers | Zhiyuan Ye, Ali Zojaji | 2011-10-04 |
| 7960236 | Phosphorus containing Si epitaxial layers in N-type source/drain junctions | Saurabh Chopra, Zhiyuan Ye | 2011-06-14 |
| 7960256 | Use of CL2 and/or HCL during silicon epitaxial film formation | Zhiyuan Ye, Xiaowei Li, Ali Zojaji, Nicholas C. Dalida, Jinsong Tang +2 more | 2011-06-14 |
| 7897495 | Formation of epitaxial layer containing silicon and carbon | Zhiyuan Ye, Andrew Lam | 2011-03-01 |
| 7837790 | Formation and treatment of epitaxial layer containing silicon and carbon | Arkadii V. Samoilov | 2010-11-23 |
| 7776698 | Selective formation of silicon carbon epitaxial layer | Zhiyuan Ye, Saurabh Chopra, Andrew Lam | 2010-08-17 |
| 7772074 | Method of forming conformal silicon layer for recessed source-drain | Zhiyuan Ye, Andrew Lam, Saurabh Chopra | 2010-08-10 |
| 7741200 | Formation and treatment of epitaxial layer containing silicon and carbon | Yonah Cho | 2010-06-22 |
| 7737007 | Methods to fabricate MOSFET devices using a selective deposition process | Arkadii V. Samoilov, Errol Antonio C. Sanchez, Nicholas C. Dalida | 2010-06-15 |
| 7732269 | Method of ultra-shallow junction formation using Si film alloyed with carbon | Majeed A. Foad, Yonah Cho, Zhiyuan Ye, Ali Zojaji, Errol Antonio C. Sanchez | 2010-06-08 |
| 7732305 | Use of Cl2 and/or HCl during silicon epitaxial film formation | Zhiyuan Ye, Xiaowei Li, Ali Zojaji, Nicholas C. Dalida, Jinsong Tang +2 more | 2010-06-08 |
| 7700424 | Method of forming an embedded silicon carbon epitaxial layer | John Boland, Zhiyuan Ye | 2010-04-20 |
| 7682940 | Use of Cl2 and/or HCl during silicon epitaxial film formation | Zhiyuan Ye, Xiaowei Li, Ali Zojaji, Nicholas C. Dalida, Jinsong Tang +2 more | 2010-03-23 |
| 7674337 | Gas manifolds for use during epitaxial film formation | David Masayuki Ishikawa, Craig Metzner, Ali Zojaji, Arkadii V. Samoilov | 2010-03-09 |
| 7651948 | Pre-cleaning of substrates in epitaxy chambers | Jean R. Vatus, Lori D. Washington, Arkadii V. Samoilov, Ali Zojaji | 2010-01-26 |
| 7598178 | Carbon precursors for use during silicon epitaxial film formation | Arkadii V. Samoilov, Rohini Kodali, Ali Zojaji | 2009-10-06 |
| 7588980 | Methods of controlling morphology during epitaxial layer formation | Andrew Lam | 2009-09-15 |
| 7572715 | Selective epitaxy process with alternating gas supply | Arkadii V. Samoilov | 2009-08-11 |
| 7560352 | Selective deposition | David K. Carlson, Satheesh Kuppurao, Errol Antonio C. Sanchez, Howard Beckford | 2009-07-14 |
| 7521365 | Selective epitaxy process with alternating gas supply | Arkadii V. Samoilov | 2009-04-21 |
| 7517775 | Methods of selective deposition of heavily doped epitaxial SiGe | Arkadii V. Samoilov | 2009-04-14 |
| 7494545 | Epitaxial deposition process and apparatus | Andrew Lam, Satheesh Kuppurao, See-Eng Phan, Xinliang Lu, Chien-Teh Kao | 2009-02-24 |