HW

Haihong Wang

AM AMD: 87 patents #41 of 9,279Top 1%
Globalfoundries: 3 patents #1,029 of 4,424Top 25%
RU Rubrik: 3 patents #112 of 335Top 35%
EM Emc: 2 patents #1,324 of 3,345Top 40%
SL Spansion Llc.: 1 patents #435 of 769Top 60%
BO BOE: 1 patents #7,844 of 12,373Top 65%
📍 Fremont, CA: #76 of 9,298 inventorsTop 1%
🗺 California: #2,363 of 386,348 inventorsTop 1%
Overall (All Time): #15,407 of 4,157,543Top 1%
97
Patents All Time

Issued Patents All Time

Showing 26–50 of 97 patents

Patent #TitleCo-InventorsDate
7186599 Narrow-body damascene tri-gate FinFET Shibly S. Ahmed, Bin Yu 2007-03-06
7179692 Method of manufacturing a semiconductor device having a fin structure Bin Yu, Shibly S. Ahmed, Judy Xilin An, Srikanteswara Dakshina-Murthy, Zoran Krivokapic 2007-02-20
7170084 Strained silicon MOSFET having improved source/drain extension dopant diffusion resistance and method for its fabrication Qi Xiang, Jung-Suk Goo 2007-01-30
7148526 Germanium MOSFET devices and methods for making same Judy Xilin An, Zoran Krivokapic, Bin Yu 2006-12-12
7125776 Multi-step chemical mechanical polishing of a gate area in a FinFET Krishnashree Achuthan, Shibly S. Ahmed, Bin Yu 2006-10-24
7112847 Smooth fin topology in a FinFET device Bin Yu 2006-09-26
7095065 Varying carrier mobility in semiconductor devices to achieve overall design goals Bin Yu, Shibly S. Ahmed 2006-08-22
7071065 Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabrication Qi Xiang, Eric N. Paton 2006-07-04
7041542 Damascene tri-gate FinFET Shibly S. Ahmed, Bin Yu 2006-05-09
7041601 Method of manufacturing metal gate MOSFET with strained channel Bin Yu 2006-05-09
7034361 Narrow body raised source/drain metal gate MOSFET Bin Yu, Shibly S. Ahmed 2006-04-25
7029958 Self aligned damascene gate Cyrus E. Tabery, Shibly S. Ahmed, Matthew S. Buynoski, Srikanteswara Dakshina-Murthy, Zoran Krivokapic +2 more 2006-04-18
7001837 Semiconductor with tensile strained substrate and method of making the same Minh Van Ngo, Paul R. Besser, Ming-Ren Lin 2006-02-21
6995438 Semiconductor device with fully silicided source/drain and damascence metal gate Shibly S. Ahmed, Bin Yu 2006-02-07
6984569 Shallow trench isolation (STI) region with high-K liner and method of formation Olov Karlsson, Bin Yu, Zoran Krivokapic, Qi Xiang 2006-01-10
6982464 Dual silicon layer for chemical mechanical polishing planarization Krishnashree Achuthan, Shibly S. Ahmed, Bin Yu 2006-01-03
6974983 Isolated FinFET P-channel/N-channel transistor pair Wiley Eugene Hill, Shibly S. Ahmed, Bin Yu 2005-12-13
6967175 Damascene gate semiconductor processing with local thinning of channel region Shibly S. Ahmed, Bin Yu 2005-11-22
6962857 Shallow trench isolation process using oxide deposition and anneal Minh Van Ngo, Ming-Ren Lin, Eric N. Paton, Qi Xiang, Jung-Suk Goo 2005-11-08
6958512 Non-volatile memory device Yider Wu, Shibly S. Ahmed, Bin Yu 2005-10-25
6936882 Selective silicidation of gates in semiconductor devices to achieve multiple threshold voltages Shibly S. Ahmed, Bin Yu 2005-08-30
6933558 Flash memory device Wiley Eugene Hill, Yider Wu, Bin Yu 2005-08-23
6924182 Strained silicon MOSFET having reduced leakage and method of its formation Qi Xiang, Ming-Ren Lin, Minh Van Ngo, Eric N. Paton 2005-08-02
6921709 Front side seal to prevent germanium outgassing Eric N. Paton, Qi Xiang 2005-07-26
6921963 Narrow fin FinFET Zoran Krivokapic, Judy Xilin An, Srikanteswara Dakshina-Murthy, Bin Yu 2005-07-26