Issued Patents All Time
Showing 76–100 of 152 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6100148 | Semiconductor device having a liner defining the depth of an active region, and fabrication thereof | Mark I. Gardner, Jim Fulford | 2000-08-08 |
| 6100146 | Method of forming trench transistor with insulative spacers | Mark I. Gardner, Robert Dawson, H. Jim Fulford, Frederick N. Hause, Mark W. Michael +1 more | 2000-08-08 |
| 6096591 | Method of making an IGFET and a protected resistor with reduced processing steps | Mark I. Gardner, Daniel Kadosh | 2000-08-01 |
| 6096615 | Method of forming a semiconductor device having narrow gate electrode | Mark I. Gardner | 2000-08-01 |
| 6096639 | Method of forming a local interconnect by conductive layer patterning | Robert Dawson, Mark I. Gardner, Frederick N. Hause, H. Jim Fulford, Mark W. Michael +1 more | 2000-08-01 |
| 6097062 | Optimized trench edge formation integrated with high quality gate formation | Mark I. Gardner, H. Jim Fulford | 2000-08-01 |
| 6093611 | Oxide liner for high reliability with reduced encroachment of the source/drain region | Mark I. Gardner, H. Jim Fulford | 2000-07-25 |
| 6087706 | Compact transistor structure with adjacent trench isolation and source/drain regions implanted vertically into trench walls | Robert Dawson, Mark I. Gardner, Frederick N. Hause, H. Jim Fulford, Mark W. Michael +1 more | 2000-07-11 |
| 6083272 | Method of adjusting currents on a semiconductor device having transistors of varying density | John L. Nistler | 2000-07-04 |
| 6080629 | Ion implantation into a gate electrode layer using an implant profile displacement layer | Mark I. Gardner, Robert Dawson, H. Jim Fulford, Frederick N. Hause, Mark W. Michael +1 more | 2000-06-27 |
| 6074906 | Complementary metal-oxide semiconductor device having source/drain regions formed using multiple spacers | Jon D. Cheek, H. Jim Fulford | 2000-06-13 |
| 6060345 | Method of making NMOS and PMOS devices with reduced masking steps | Frederick N. Hause, Robert Dawson, H. Jim Fulford, Mark I. Gardner, Mark W. Michael +1 more | 2000-05-09 |
| 6060369 | Nitrogen bearing sacrificial oxide with subsequent high nitrogen dopant profile for high performance MOSFET | Mark I. Gardner, H. Jim Fulford | 2000-05-09 |
| 6057194 | Method of forming trench transistor in combination with trench array | H. Jim Fulford, Mark I. Gardner | 2000-05-02 |
| 6051459 | Method of making N-channel and P-channel IGFETs using selective doping and activation for the N-channel gate | Mark I. Gardner, Daniel Kadosh, Frederick N. Hause | 2000-04-18 |
| 6051865 | Transistor having a barrier layer below a high permittivity gate dielectric | Mark I. Gardner, Mark C. Gilmer | 2000-04-18 |
| 6051471 | Method for making asymmetrical N-channel and symmetrical P-channel devices | Mark I. Gardner, H. Jim Fulford | 2000-04-18 |
| 6048785 | Semiconductor fabrication method of combining a plurality of fields defined by a reticle image using segment stitching | H. Jim Fulford, Robert Dawson, Mark I. Gardner, Frederick N. Hause, Mark W. Michael +1 more | 2000-04-11 |
| 6040607 | Self aligned method for differential oxidation rate at shallow trench isolation edge | H. Jim Fulford, Mark I. Gardner | 2000-03-21 |
| 6030752 | Method of stitching segments defined by adjacent image patterns during the manufacture of a semiconductor device | H. Jim Fulford, Robert Dawson, Mark I. Gardner, Frederick N. Hause, Mark W. Michael +1 more | 2000-02-29 |
| 6018180 | Transistor formation with LI overetch immunity | Jon D. Cheek, H. Jim Fulford | 2000-01-25 |
| 6018179 | Transistors having a scaled channel length and integrated spacers with enhanced silicidation properties | Mark I. Gardner, Fred N. Hause | 2000-01-25 |
| 5994175 | High performance MOSFET with low resistance design | Mark I. Gardner, H. Jim Fulford | 1999-11-30 |
| 5994193 | Method of making high performance MOSFET with integrated poly/metal gate electrode | Mark I. Gardner, Jon D. Cheek | 1999-11-30 |
| 5981365 | Stacked poly-oxide-poly gate for improved silicide formation | Jon D. Cheek, Mark I. Gardner | 1999-11-09 |