DW

Derick J. Wristers

AM AMD: 151 patents #11 of 9,279Top 1%
🗺 Texas: #176 of 125,132 inventorsTop 1%
Overall (All Time): #6,064 of 4,157,543Top 1%
152
Patents All Time

Issued Patents All Time

Showing 126–150 of 152 patents

Patent #TitleCo-InventorsDate
5874343 CMOS integrated circuit and method for forming source/drain areas prior to forming lightly doped drains to optimize the thermal diffusivity thereof H. Jim Fulford, Mark I. Gardner 1999-02-23
5874340 Method for fabrication of a non-symmetrical transistor with sequentially formed gate electrode sidewalls Mark I. Gardner, H. Jim Fulford 1999-02-23
5869879 CMOS integrated circuit having a sacrificial metal spacer for producing graded NMOS source/drain junctions dissimilar from PMOS source/drain junctions H. Jim Fulford, Mark I. Gardner 1999-02-09
5869866 Integrated circuit having sacrificial spacers for producing graded NMOS source/drain junctions possibly dissimilar from PMOS source/drain junctions H. Jim Fulford, Mark I. Gardner 1999-02-09
5854121 Semiconductor fabrication employing barrier atoms incorporated at the edges of a trench isolation structure Mark I. Gardner, H. Jim Fulford 1998-12-29
5851891 IGFET method of forming with silicide contact on ultra-thin gate Robert Dawson, H. Jim Fulford, Mark I. Gardner, Frederick N. Hause, Mark W. Michael +1 more 1998-12-22
5847428 Integrated circuit gate conductor which uses layered spacers to produce a graded junction H. Jim Fulford, Mark I. Gardner 1998-12-08
5844276 CMOS integrated circuit and method for implanting NMOS transistor areas prior to implanting PMOS transistor areas to optimize the thermal diffusivity thereof H. Jim Fulford, Mark I. Gardner 1998-12-01
5840451 Individually controllable radiation sources for providing an image pattern in a photolithographic system Bradley T. Moore, Robert Dawson, H. Jim Fulford, Mark I. Gardner, Frederick N. Hause +1 more 1998-11-24
5837557 Semiconductor fabrication method of forming a master layer to combine individually printed blocks of a circuit pattern H. Jim Fulford, Robert Dawson, Mark I. Gardner, Frederick N. Hause, Mark W. Michael +1 more 1998-11-17
5831306 Asymmetrical transistor with lightly doped drain region, heavily doped source and drain regions, and ultra-heavily doped source region Mark I. Gardner, H. Jim Fulford 1998-11-03
5827761 Method of making NMOS and devices with sequentially formed gates having different gate lengths H. Jim Fulford, Robert Dawson, Mark I. Gardner, Frederick N. Hause, Mark W. Michael +1 more 1998-10-27
5811222 Method of selectively exposing a material using a photosensitive layer and multiple image patterns Mark I. Gardner, H. Jim Fulford 1998-09-22
5801088 Method of forming a gate electrode for an IGFET Mark I. Gardner, H. Jim Fulford 1998-09-01
5801075 Method of forming trench transistor with metal spacers Mark I. Gardner, Robert Dawson, H. Jim Fulford, Frederick N. Hause, Mark W. Michael +1 more 1998-09-01
5796143 Trench transistor in combination with trench array H. Jim Fulford, Mark I. Gardner 1998-08-18
5770485 MOSFET device with an amorphized source and fabrication method thereof Mark I. Gardner, H. Jim Fulford 1998-06-23
5766969 Multiple spacer formation/removal technique for forming a graded junction H. Jim Fulford, Mark I. Gardner 1998-06-16
5723238 Inspection of lens error associated with lens heating in a photolithographic system Bradley T. Moore, Robert Dawson, H. Jim Fulford, Mark I. Gardner, Frederick N. Hause +1 more 1998-03-03
5710054 Method of forming a shallow junction by diffusion from a silicon-based spacer Mark I. Gardner, Robert Dawson, H. Jim Fulford, Frederick N. Hause, Mark W. Michael +1 more 1998-01-20
5679585 Method for forming metal silicide on a semiconductor surface with minimal effect on pre-existing implants Mark I. Gardner, Fred N. Hause, Dim-Lee Kwong 1997-10-21
5672531 Method for fabrication of a non-symmetrical transistor Mark I. Gardner, Michael Duane 1997-09-30
5656518 Method for fabrication of a non-symmetrical transistor Mark I. Gardner, Daniel Kadosh 1997-08-12
5648286 Method of making asymmetrical transistor with lightly doped drain region, heavily doped source and drain regions, and ultra-heavily doped source region Mark I. Gardner, H. Jim Fulford 1997-07-15
5472774 Photolithography test structure Howard S. Goad, James H. Hussey, Jr., Michael A. Hillis, William C. Chapman 1995-12-05