| 8319302 |
Wafer arrangement and a method for manufacturing the wafer arrangement |
Qingxin Zhang, Guo-Qiang Lo, Mingbin Yu |
2012-11-27 |
|
| 7514360 |
Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof |
Hong Yu Yu, Ming Li, Lakshmi Kanta Bera |
2009-04-07 |
|
| 7504329 |
Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET |
Hongyu Yu, Chen JingDe, Li Mingfu, Serge Biesemans, Jorge A. Kittl |
2009-03-17 |
$14,710,000 |
| 7504328 |
Schottky barrier source/drain n-mosfet using ytterbium silicide |
Shiyang Zhu, Jingde Chen, Sungjoo Lee, Ming Li, Jagar Singh +1 more |
2009-03-17 |
|
| 6911707 |
Ultrathin high-K gate dielectric with favorable interface properties for improved semiconductor device performance |
Mark I. Gardner, H. Jim Fulford |
2005-06-28 |
$6,294,000 |
| 6468856 |
High charge storage density integrated circuit capacitor |
Robert M. Wallace, Glen Wilk, Mark Anthony |
2002-10-22 |
$14,124,000 |
| 6303520 |
Silicon oxynitride film |
Steven Marcus, Jeff Gelpey |
2001-10-16 |
$4,361,000 |
| 6284586 |
Integrated circuit device and method of making the same using chemical mechanical polishing to remove material in two layers following masking |
John J. Seliskar, Derryl D. J. Allman, John Gregory, James P. Yakura |
2001-09-04 |
$25,136,000 |
| 6252283 |
CMOS transistor design for shared N+/P+ electrode with enhanced device performance |
Mark I. Gardner, Frederick N. Hause |
2001-06-26 |
$6,004,000 |
| 6245652 |
Method of forming ultra thin gate dielectric for high performance semiconductor devices |
Mark I. Gardner, H. Jim Fulford |
2001-06-12 |
$5,669,000 |
| 6228779 |
Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated by high pressure technology |
John A. Bloom, Robert K. Evans, Bruce T. Acker |
2001-05-08 |
$149,730,000 |
| 6225168 |
Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof |
Mark I. Gardner, H. Jim Fulford, Charles E. May, Fred N. Hause |
2001-05-01 |
$7,851,000 |
| 6218720 |
Semiconductor topography employing a nitrogenated shallow trench isolation structure |
Mark I. Gardner, H. Jim Fulford |
2001-04-17 |
$5,863,000 |
| 6211096 |
Tunable dielectric constant oxide and method of manufacture |
Derryl D. J. Allman |
2001-04-03 |
$17,798,000 |
| 6207995 |
High K integration of gate dielectric with integrated spacer formation for high speed CMOS |
Mark I. Gardner, H. Jim Fulford |
2001-03-27 |
$5,495,000 |
| 6115233 |
Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region |
John J. Seliskar, Derryl D. J. Allman, John Gregory, James P. Yakura |
2000-09-05 |
$14,742,000 |
| 6015739 |
Method of making gate dielectric for sub-half micron MOS transistors including a graded dielectric constant |
Mark I. Gardner, H. Jim Fulford |
2000-01-18 |
$6,465,000 |
| 5679585 |
Method for forming metal silicide on a semiconductor surface with minimal effect on pre-existing implants |
Mark I. Gardner, Fred N. Hause, Derick J. Wristers |
1997-10-21 |
$6,081,000 |
| 5674788 |
Method of forming high pressure silicon oxynitride gate dielectrics |
Dirk J. Wristers, H. Jim Fulford |
1997-10-07 |
$8,877,000 |
| 5591681 |
Method for achieving a highly reliable oxide film |
Dirk J. Wristers, H. Jim Fulford |
1997-01-07 |
$8,683,000 |
| 5578848 |
Ultra thin dielectric for electronic devices and method of making same |
Giwan Yoon, Jonghan Kim, Liang Han, Jiang Yan |
1996-11-26 |
|
| 5541436 |
MOS transistor having improved oxynitride dielectric |
Giwan Yoon, Jonghan Kim |
1996-07-30 |
|
| 5478765 |
Method of making an ultra thin dielectric for electronic devices |
Giwan Yoon, Jonghan Kim, Liang Han, Jiang Yan |
1995-12-26 |
|
| 5397720 |
Method of making MOS transistor having improved oxynitride dielectric |
Giwan Yoon, Jonghan Kim |
1995-03-14 |
|
| 5340752 |
Method for forming a bipolar transistor using doped SOG |
Derryl D. J. Allman |
1994-08-23 |
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