Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8815702 | Methods of manufacturing semiconductor devices having a support structure for an active layer pattern | Chang-Woo Oh, Dong-Gun Park, Dong Won Kim, Sung Hwan Kim | 2014-08-26 |
| 8680588 | Field effect transistor with buried gate pattern | Dong-Uk Choi, Chang-Woo Oh, Dong Won Kim, Min Sang Kim, Sung Hwan Kim +1 more | 2014-03-25 |
| 8528376 | Mold set for manufacturing case and the method thereof | Sheng-Chi Tsai, Ping-Kuo Cheng, Tai-Chang CHEN | 2013-09-10 |
| 8426901 | Semiconductor devices having a support structure for an active layer pattern | Chang-Woo Oh, Dong-Gun Park, Dong Won Kim, Sung Hwan Kim | 2013-04-23 |
| 8124961 | Single electron transistor | Sung-Dae Suk, Kyoung-Hwan Yeo, Yun-Young Yeoh | 2012-02-28 |
| 8008141 | Method of fabricating a semiconductor device with multiple channels | Kyoung-Hwan Yeo, Sung Min Kim, Sung-Dae Suk, Dong Won Kim | 2011-08-30 |
| 7989854 | Semiconductor devices having a support structure for an active layer pattern | Chang-Woo Oh, Dong-Gun Park, Dong Won Kim, Sung Hwan Kim | 2011-08-02 |
| 7955932 | Single electron transistor and method of manufacturing the same | Sung-Dae Suk, Kyoung-Hwan Yeo, Yun-Young Yeoh | 2011-06-07 |
| 7858457 | Methods of forming integrated circuit devices including a depletion barrier layer at source/drain regions | — | 2010-12-28 |
| 7579657 | Semiconductor device with multiple channels | Kyoung-Hwan Yeo, Sung Min Kim, Sung-Dae Suk, Dong Won Kim | 2009-08-25 |
| 7514360 | Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof | Hong Yu Yu, Dim-Lee Kwong, Lakshmi Kanta Bera | 2009-04-07 |
| 7504328 | Schottky barrier source/drain n-mosfet using ytterbium silicide | Shiyang Zhu, Jingde Chen, Sungjoo Lee, Jagar Singh, Chunxiang Zhu +1 more | 2009-03-17 |
| 7427788 | Multi bridge channel field effect transistors with nano-wire channels and methods of manufacturing the same | Sung Min Kim | 2008-09-23 |
| 7396730 | Integrated circuit devices including an L-shaped depletion barrier layer adjacent opposite sides of a gate pattern and methods of forming the same | — | 2008-07-08 |
| 7389664 | Electromagnetic forming device for sheet of material | Tung-Chen Cheng, Tzyy-Ker Sue, Chi-Keung Chung, Chun-Chieh Wang, Hsing-Ta Hsieh | 2008-06-24 |
| 7374986 | Method of fabricating field effect transistor (FET) having wire channels | Sungmin Kim, Eungjung Yoon | 2008-05-20 |
| 7361545 | Field effect transistor with buried gate pattern | Dong-Uk Choi, Chang-Woo Oh, Dong Won Kim, Min Sang Kim, Sung Hwan Kim +1 more | 2008-04-22 |
| 7332386 | Methods of fabricating fin field transistors | Chul Lee, Min Sang Kim, Dong-Gun Park, Choong-Ho Lee, Chang-Woo Oh +4 more | 2008-02-19 |
| 7274051 | Field effect transistor (FET) having wire channels and method of fabricating the same | Sungmin Kim, Eungjung Yoon | 2007-09-25 |
| 7002175 | Method of making resonant tunneling diodes and CMOS backend-process-compatible three dimensional (3-D) integration | Jagar Singh, Yong-Tian Hou | 2006-02-21 |