Issued Patents 2023
Showing 26–49 of 49 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11690215 | Self-aligned bitline and capacitor via formation | Abhishek A. Sharma, Van H. Le, Tahir Ghani, Yih Wang, Benjamin Chu-Kung +1 more | 2023-06-27 |
| 11683929 | Method for making memory cells based on thin-film transistors | Travis W. Lajoie, Abhishek A. Sharma, Van H. Le, Chieh-Jen Ku, Pei-Hua Wang +3 more | 2023-06-20 |
| 11677003 | Nanowire transistor fabrication with hardmask layers | Seung Hoon Sung, Seiyon Kim, Kelin J. Kuhn, Willy Rachmady | 2023-06-13 |
| 11676966 | Stacked transistors having device strata with different channel widths | Gilbert Dewey, Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Kimin Jun +4 more | 2023-06-13 |
| 11670682 | FINFET transistor having a doped sub fin structure to reduce channel to substrate leakage | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Anand S. Murthy, Chandra S. Mohapatra +2 more | 2023-06-06 |
| 11658222 | Thin film transistor with charge trap layer | Abhishek A. Sharma, Van H. Le, Tahir Ghani, Gilbert Dewey, Shriram Shivaraman +2 more | 2023-05-23 |
| 11652606 | Advanced encryption standard semiconductor devices fabricated on a stacked-substrate | Abhishek A. Sharma, Willy Rachmady, Ravi Pillarisetty, Gilbert Dewey | 2023-05-16 |
| 11652047 | Intermediate separation layers at the back-end-of-line | Travis W. Lajoie, Abhishek A. Sharma, Van H. Le, Chieh-Jen Ku, Pei-Hua Wang +13 more | 2023-05-16 |
| 11640984 | Transistor device with (anti)ferroelectric spacer structures | Ian A. Young, Matthew V. Metz, Uygar E. Avci, Chia-Ching Lin, Owen Loh +5 more | 2023-05-02 |
| 11640961 | III-V source/drain in top NMOS transistors for low temperature stacked transistor contacts | Gilbert Dewey, Ravi Pillarisetty, Aaron D. Lilak, Willy Rachmady, Rishabh Mehandru +6 more | 2023-05-02 |
| 11637185 | Contact stacks to reduce hydrogen in semiconductor devices | Justin R. Weber, Harold W. Kennel, Abhishek A. Sharma, Christopher J. Jezewski, Matthew V. Metz +4 more | 2023-04-25 |
| 11631737 | Ingaas epi structure and wet etch process for enabling III-v GAA in art trench | Sanaz K. Gardner, Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra +4 more | 2023-04-18 |
| 11626475 | Trench capacitor with extended dielectric layer | Nazila Haratipour, Chia-Ching Lin, Sou-Chi Chang, Ian A. Young, Uygar E. Avci | 2023-04-11 |
| 11626519 | Fabrication of non-planar IGZO devices for improved electrostatics | Van H. Le, Gilbert Dewey, Rafael Rios, Marko Radosavljevic, Kent Millard +4 more | 2023-04-11 |
| 11626437 | Integration of metasurface lens on wafer level substrate | Prashant Majhi, Kunjal Parikh | 2023-04-11 |
| 11616130 | Transistor device with variously conformal gate dielectric layers | Seung Hoon Sung, Ian A. Young, Matthew V. Metz, Uygar E. Avci, Devin Merrill +3 more | 2023-03-28 |
| 11610894 | Capacitor separations in dielectric layers | Travis W. Lajoie, Abhishek A. Sharma, Van H. Le, Chieh-Jen Ku, Pei-Hua Wang +13 more | 2023-03-21 |
| 11605565 | Three dimensional integrated circuits with stacked transistors | Cheng-Ying Huang, Willy Rachmady, Gilbert Dewey, Aaron D. Lilak, Kimin Jun +5 more | 2023-03-14 |
| 11594533 | Stacked trigate transistors with dielectric isolation between first and second semiconductor fins | Willy Rachmady, Cheng-Ying Huang, Gilbert Dewey, Aaron D. Lilak, Patrick Morrow +2 more | 2023-02-28 |
| 11588102 | Semiconductor material for resistive random access memory | Abhishek A. Sharma, Van H. Le, Gilbert Dewey, Rafael Rios, Shriram Shivaraman | 2023-02-21 |
| 11575005 | Asymmetrical semiconductor nanowire field-effect transistor | Seung Hoon Sung, Dipanjan Basu, Ashish Agrawal, Benjamin Chu-Kung, Siddharth Chouksey +3 more | 2023-02-07 |
| 11569233 | Techniques and mechanisms for operation of stacked transistors | Ravi Pillarisetty, Willy Rachmady, Marko Radosavljevic, Van H. Le | 2023-01-31 |
| 11569243 | Stacked-substrate DRAM semiconductor devices | Abhishek A. Sharma, Willy Rachmady, Ravi Pillarisetty, Gilbert Dewey | 2023-01-31 |
| 11563119 | Etchstop regions in fins of semiconductor devices | Cheng-Ying Huang, Willy Rachmady, Gilbert Dewey, Erica J. Thompson, Aaron D. Lilak | 2023-01-24 |