| 11799029 |
Multilayer insulator stack for ferroelectric transistor and capacitor |
Joshua M. Howard, Seiyon Kim, Ian A. Young |
2023-10-24 |
$20,059,000 |
| 11785759 |
Floating body memory cell having gates favoring different conductivity type regions |
Peter L. D. Chang, David L. Kencke, Ibrahim Ban |
2023-10-10 |
$20,947,000 |
| 11769789 |
MFM capacitor with multilayered oxides and metals and processes for forming such |
Nazila Haratipour, Chia-Ching Lin, Sou-Chi Chang, Ashish Verma Penumatcha, Owen Loh +4 more |
2023-09-26 |
$20,953,000 |
| 11742407 |
Multilayer high-k gate dielectric for a high performance logic transistor |
Seung Hoon Sung, Ashish Verma Penumatcha, Sou-Chi Chang, Devin Merrill, I-Cheng Tung +8 more |
2023-08-29 |
$19,273,000 |
| 11735652 |
Field effect transistors having ferroelectric or antiferroelectric gate dielectric structure |
Seiyon Kim, Joshua M. Howard, Ian A. Young, Daniel H. Morris |
2023-08-22 |
$16,803,000 |
| 11734174 |
Low overhead, high bandwidth re-configurable interconnect apparatus and method |
Huichu Liu, Tanay Karnik, Tejpal Singh, Yen-Cheng Liu, Lavanya Subramanian +6 more |
2023-08-22 |
$16,803,000 |
| 11727260 |
Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuits |
Abhishek A. Sharma, Jack T. Kavalieros, Ian A. Young, Ram Krishnamurthy, Sasikanth Manipatruni +7 more |
2023-08-15 |
$18,845,000 |
| 11723188 |
Replacement metal COB integration process for embedded DRAM |
Ian A. Young, Daniel H. Morris, Seiyon Kim, Yih Wang, Ruth A. Brain |
2023-08-08 |
$22,376,000 |
| 11695051 |
Gate stacks for FinFET transistors |
Ashish Verma Penumatcha, Seung Hoon Sung, Scott B. Clendenning, Ian A. Young, Jack T. Kavalieros |
2023-07-04 |
|
| 11653502 |
FeFET with embedded conductive sidewall spacers and process for forming the same |
Shriram Shivaraman, Seung Hoon Sung, Ashish Verma Penumatcha |
2023-05-16 |
$11,130,000 |
| 11646374 |
Ferroelectric transistors to store multiple states of resistances for memory cells |
Ashish Verma Penumatcha, Tanay Gosavi, Ian A. Young |
2023-05-09 |
$19,706,000 |
| 11646356 |
Piezo-resistive transistor based resonator with anti-ferroelectric gate dielectric |
Tanay Gosavi, Chia-Ching Lin, Raseong Kim, Ashish Verma Penumatcha, Ian A. Young |
2023-05-09 |
$19,706,000 |
| 11640984 |
Transistor device with (anti)ferroelectric spacer structures |
Jack T. Kavalieros, Ian A. Young, Matthew V. Metz, Chia-Ching Lin, Owen Loh +5 more |
2023-05-02 |
$21,235,000 |
| 11637191 |
Piezo-resistive transistor based resonator with ferroelectric gate dielectric |
Tanay Gosavi, Chia-Ching Lin, Raseong Kim, Ashish Verma Penumatcha, Ian A. Young |
2023-04-25 |
$19,274,000 |
| 11626475 |
Trench capacitor with extended dielectric layer |
Nazila Haratipour, Chia-Ching Lin, Sou-Chi Chang, Ian A. Young, Jack T. Kavalieros |
2023-04-11 |
$27,486,000 |
| 11616130 |
Transistor device with variously conformal gate dielectric layers |
Seung Hoon Sung, Jack T. Kavalieros, Ian A. Young, Matthew V. Metz, Devin Merrill +3 more |
2023-03-28 |
$20,940,000 |
| 11605624 |
Ferroelectric resonator |
Tanay Gosavi, Chia-Ching Lin, Raseong Kim, Ashish Verma Penumatcha, Ian A. Young |
2023-03-14 |
$29,588,000 |
| 11594624 |
Transistor structures formed with 2DEG at complex oxide interfaces |
Sasikanth Manipatruni, Dmitri E. Nikonov, Chia-Ching Lin, Tanay Gosavi, Ian A. Young |
2023-02-28 |
$10,430,000 |
| 11581417 |
Improper ferroelectric active and passive devices |
Sasikanth Manipatruni, Sou-Chi Chang, Ian A. Young |
2023-02-14 |
$12,790,000 |
| 11552180 |
Antiferroelectric perovskite gate oxide for transistor applications |
Sasikanth Manipatruni, Seiyon Kim, Ian A. Young |
2023-01-10 |
$14,061,000 |
