Issued Patents 2023
Showing 25 most recent of 44 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11854593 | Ferroelectric memory device integrated with a transition electrode | Noriyuki Sato, Niloy Mukherjee, Amrita Mathuriya, Rajeev Kumar Dokania, Sasikanth Manipatruni | 2023-12-26 |
| 11844225 | Dual hydrogen barrier layer for memory devices integrated with low density film for logic structures and methods of fabrication | Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more | 2023-12-12 |
| 11844203 | Conductive and insulative hydrogen barrier layer for memory devices | Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more | 2023-12-12 |
| 11837268 | Multi-element ferroelectric gain memory bit-cell having stacked and folded planar capacitors with lateral offset | Rajeev Kumar Dokania, Amrita Mathuriya, Debo Olaosebikan, Noriyuki Sato, Sasikanth Manipatruni | 2023-12-05 |
| 11839088 | Integrated via and bridge electrodes for memory array applications and methods of fabrication | Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more | 2023-12-05 |
| 11839070 | High density dual encapsulation materials for capacitors and methods of fabrication | Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more | 2023-12-05 |
| 11818897 | Method of forming a stack of planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni | 2023-11-14 |
| 11818963 | Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy | Sasikanth Manipatruni, Kaan Oguz, Chia-Ching Lin, Christopher J. Wiegand, Ian A. Young | 2023-11-14 |
| 11810608 | Manganese or scandium doped multi-element non-linear polar material gain memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2023-11-07 |
| 11800722 | Common mode compensation for non-linear polar material based differential memory bit-cell having one transistor and multiple capacitors | Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni | 2023-10-24 |
| 11792997 | Common mode compensation for differential multi-element non-linear polar material based gain memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni | 2023-10-17 |
| 11792998 | Process integration flow for embedded memory with multi-pocket masks for decoupling processing of memory areas from non-memory areas | Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya, Sasikanth Manipatruni | 2023-10-17 |
| 11785782 | Embedded memory with encapsulation layer adjacent to a memory stack | Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya, Sasikanth Manipatruni | 2023-10-10 |
| 11770936 | Stack of planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni | 2023-09-26 |
| 11769790 | Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors | Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren +8 more | 2023-09-26 |
| 11765908 | Memory device fabrication through wafer bonding | Mauricio Manfrini, Noriyuki Sato, James David Clarkson, Abel Fernandez, Somilkumar J. Rathi +4 more | 2023-09-19 |
| 11765909 | Process integration flow for embedded memory enabled by decoupling processing of a memory area from a non-memory area | Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya, Sasikanth Manipatruni | 2023-09-19 |
| 11758708 | Stack of non-planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni | 2023-09-12 |
| 11751403 | Common mode compensation for 2T1C non-linear polar material based memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni | 2023-09-05 |
| 11741428 | Iterative monetization of process development of non-linear polar material and devices | Sasikanth Manipatruni, Niloy Mukherjee, Noriyuki Sato, Somilkumar J. Rathi, James David Clarkson +3 more | 2023-08-29 |
| 11737283 | Method of forming a stack of non-planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni | 2023-08-22 |
| 11729995 | Common mode compensation for non-linear polar material 1TnC memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni | 2023-08-15 |
| 11729991 | Common mode compensation for non-linear polar material based differential memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni | 2023-08-15 |
| 11696450 | Common mode compensation for multi-element non-linear polar material based gain memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni | 2023-07-04 |
| 11696514 | Transition metal dichalcogenide based magnetoelectric memory device | Chia-Ching Lin, Sasikanth Manipatruni, Dmitri E. Nikonov, Benjamin Buford, Kaan Oguz +2 more | 2023-07-04 |