| 11854593 |
Ferroelectric memory device integrated with a transition electrode |
Noriyuki Sato, Niloy Mukherjee, Amrita Mathuriya, Rajeev Kumar Dokania, Sasikanth Manipatruni |
2023-12-26 |
|
| 11844225 |
Dual hydrogen barrier layer for memory devices integrated with low density film for logic structures and methods of fabrication |
Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more |
2023-12-12 |
|
| 11844203 |
Conductive and insulative hydrogen barrier layer for memory devices |
Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more |
2023-12-12 |
|
| 11837268 |
Multi-element ferroelectric gain memory bit-cell having stacked and folded planar capacitors with lateral offset |
Rajeev Kumar Dokania, Amrita Mathuriya, Debo Olaosebikan, Noriyuki Sato, Sasikanth Manipatruni |
2023-12-05 |
|
| 11839088 |
Integrated via and bridge electrodes for memory array applications and methods of fabrication |
Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more |
2023-12-05 |
|
| 11839070 |
High density dual encapsulation materials for capacitors and methods of fabrication |
Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more |
2023-12-05 |
|
| 11818897 |
Method of forming a stack of planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni |
2023-11-14 |
|
| 11818963 |
Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy |
Sasikanth Manipatruni, Kaan Oguz, Chia-Ching Lin, Christopher J. Wiegand, Ian A. Young |
2023-11-14 |
$31,444,000 |
| 11810608 |
Manganese or scandium doped multi-element non-linear polar material gain memory bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more |
2023-11-07 |
|
| 11800722 |
Common mode compensation for non-linear polar material based differential memory bit-cell having one transistor and multiple capacitors |
Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni |
2023-10-24 |
|
| 11792997 |
Common mode compensation for differential multi-element non-linear polar material based gain memory bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni |
2023-10-17 |
|
| 11792998 |
Process integration flow for embedded memory with multi-pocket masks for decoupling processing of memory areas from non-memory areas |
Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya, Sasikanth Manipatruni |
2023-10-17 |
|
| 11785782 |
Embedded memory with encapsulation layer adjacent to a memory stack |
Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya, Sasikanth Manipatruni |
2023-10-10 |
|
| 11770936 |
Stack of planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni |
2023-09-26 |
|
| 11769790 |
Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors |
Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren +8 more |
2023-09-26 |
|
| 11765908 |
Memory device fabrication through wafer bonding |
Mauricio Manfrini, Noriyuki Sato, James David Clarkson, Abel Fernandez, Somilkumar J. Rathi +4 more |
2023-09-19 |
|
| 11765909 |
Process integration flow for embedded memory enabled by decoupling processing of a memory area from a non-memory area |
Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya, Sasikanth Manipatruni |
2023-09-19 |
|
| 11758708 |
Stack of non-planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni |
2023-09-12 |
|
| 11751403 |
Common mode compensation for 2T1C non-linear polar material based memory bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni |
2023-09-05 |
|
| 11741428 |
Iterative monetization of process development of non-linear polar material and devices |
Sasikanth Manipatruni, Niloy Mukherjee, Noriyuki Sato, Somilkumar J. Rathi, James David Clarkson +3 more |
2023-08-29 |
|
| 11737283 |
Method of forming a stack of non-planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni |
2023-08-22 |
|
| 11729995 |
Common mode compensation for non-linear polar material 1TnC memory bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni |
2023-08-15 |
|
| 11729991 |
Common mode compensation for non-linear polar material based differential memory bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni |
2023-08-15 |
|
| 11696450 |
Common mode compensation for multi-element non-linear polar material based gain memory bit-cell |
Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni |
2023-07-04 |
|
| 11696514 |
Transition metal dichalcogenide based magnetoelectric memory device |
Chia-Ching Lin, Sasikanth Manipatruni, Dmitri E. Nikonov, Benjamin Buford, Kaan Oguz +2 more |
2023-07-04 |
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