Issued Patents 2023
Showing 25 most recent of 104 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11854593 | Ferroelectric memory device integrated with a transition electrode | Noriyuki Sato, Tanay Gosavi, Niloy Mukherjee, Amrita Mathuriya, Rajeev Kumar Dokania | 2023-12-26 |
| 11855627 | Asynchronous consensus circuit using multi-function threshold gate with input based adaptive threshold | Amrita Mathuriya, Nabil Imam, Ikenna Odinaka, Rafael Rios, Rajeev Kumar Dokania | 2023-12-26 |
| 11855626 | Asynchronous consensus circuit with stacked linear or paraelectric non-planar capacitors | Amrita Mathuriya, Nabil Imam, Ikenna Odinaka, Rafael Rios, Rajeev Kumar Dokania | 2023-12-26 |
| 11853666 | Computer-aided design tool for wide-input logic initialization | Ikenna Odinaka, Darshak Doshi, Rajeev Kumar Dokania, Amrita Mathuriya | 2023-12-26 |
| 11848386 | B-site doped perovskite layers and semiconductor device incorporating same | Ramesh Ramamoorthy, Gaurav Thareja | 2023-12-19 |
| 11844225 | Dual hydrogen barrier layer for memory devices integrated with low density film for logic structures and methods of fabrication | Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania +2 more | 2023-12-12 |
| 11844223 | Ferroelectric memory chiplet as unified memory in a multi-dimensional packaging | Amrita Mathuriya, Christopher B. Wilkerson, Rajeev Kumar Dokania, Debo Olaosebikan | 2023-12-12 |
| 11841757 | Method and apparatus for cycle-by-cycle clock gating of ferroelectric or paraelectric logic and CMOS based logic | Amrita Mathuriya, Christopher B. Wilkerson, Rajeev Kumar Dokania, Debo Olaosebikan | 2023-12-12 |
| 11844203 | Conductive and insulative hydrogen barrier layer for memory devices | Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania +2 more | 2023-12-12 |
| 11837268 | Multi-element ferroelectric gain memory bit-cell having stacked and folded planar capacitors with lateral offset | Rajeev Kumar Dokania, Amrita Mathuriya, Debo Olaosebikan, Tanay Gosavi, Noriyuki Sato | 2023-12-05 |
| 11837664 | Doped polar layers and semiconductor device incorporating same | Ramesh Ramamoorthy, Gaurav Thareja | 2023-12-05 |
| 11839070 | High density dual encapsulation materials for capacitors and methods of fabrication | Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania +2 more | 2023-12-05 |
| 11839088 | Integrated via and bridge electrodes for memory array applications and methods of fabrication | Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania +2 more | 2023-12-05 |
| 11836102 | Low latency and high bandwidth artificial intelligence processor | Amrita Mathuriya, Rajeev Kumar Dokania, Ananda Samajdar | 2023-12-05 |
| 11829699 | Method to segregate logic and memory into separate dies for thermal management in a multi-dimensional packaging | Amrita Mathuriya, Christopher B. Wilkerson, Rajeev Kumar Dokania, Debo Olaosebikan | 2023-11-28 |
| 11832451 | High density ferroelectric random access memory (FeRAM) devices and methods of fabrication | Debraj Guhabiswas, Maria Isabel Perez, Jason Y. Wu, James David Clarkson, Gabriel Antonio Paulius Velarde +4 more | 2023-11-28 |
| 11823725 | Apparatus and method for endurance of non-volatile memory banks via multi-level wear leveling | Christopher B. Wilkerson, Rajeev Kumar Dokania, Amrita Mathuriya | 2023-11-21 |
| 11818897 | Method of forming a stack of planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Amrita Mathuriya | 2023-11-14 |
| 11818963 | Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy | Kaan Oguz, Chia-Ching Lin, Christopher J. Wiegand, Tanay Gosavi, Ian A. Young | 2023-11-14 |
| 11816408 | Computer-aided design tool for majority or minority inverter graph synthesis | Ikenna Odinaka, Darshak Doshi, Rajeev Kumar Dokania, Amrita Mathuriya | 2023-11-14 |
| 11817859 | Asynchronous circuit with multi-input threshold gate logic and 1-input threshold gate | Nabil Imam, Ikenna Odinaka, Rafael Rios, Rajeev Kumar Dokania, Amrita Mathuriya | 2023-11-14 |
| 11817140 | Reading scheme for 1TNC ferroelectric memory bit-cell with plate-line parallel to bit-line and with individual switches and control on plate-lines of the bit-cell | Rajeev Kumar Dokania, Amrita Mathuriya | 2023-11-14 |
| 11810608 | Manganese or scandium doped multi-element non-linear polar material gain memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan +1 more | 2023-11-07 |
| 11809801 | Computer-aided design tool for circuit logic initialization | Ikenna Odinaka, Darshak Doshi, Rajeev Kumar Dokania, Amrita Mathuriya | 2023-11-07 |
| 11800722 | Common mode compensation for non-linear polar material based differential memory bit-cell having one transistor and multiple capacitors | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Amrita Mathuriya | 2023-10-24 |