| 11854593 |
Ferroelectric memory device integrated with a transition electrode |
Noriyuki Sato, Tanay Gosavi, Amrita Mathuriya, Rajeev Kumar Dokania, Sasikanth Manipatruni |
2023-12-26 |
| 11844225 |
Dual hydrogen barrier layer for memory devices integrated with low density film for logic structures and methods of fabrication |
Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more |
2023-12-12 |
| 11844203 |
Conductive and insulative hydrogen barrier layer for memory devices |
Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more |
2023-12-12 |
| 11839070 |
High density dual encapsulation materials for capacitors and methods of fabrication |
Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more |
2023-12-05 |
| 11839088 |
Integrated via and bridge electrodes for memory array applications and methods of fabrication |
Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more |
2023-12-05 |
| 11832451 |
High density ferroelectric random access memory (FeRAM) devices and methods of fabrication |
Debraj Guhabiswas, Maria Isabel Perez, Jason Y. Wu, James David Clarkson, Gabriel Antonio Paulius Velarde +4 more |
2023-11-28 |
| 11832537 |
Titanium silicon nitride barrier layer |
Jae Seok Heo, Jerry Mack, Somilkumar J. Rathi |
2023-11-28 |
| 11792998 |
Process integration flow for embedded memory with multi-pocket masks for decoupling processing of memory areas from non-memory areas |
Noriyuki Sato, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Sasikanth Manipatruni |
2023-10-17 |
| 11785782 |
Embedded memory with encapsulation layer adjacent to a memory stack |
Noriyuki Sato, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Sasikanth Manipatruni |
2023-10-10 |
| 11769790 |
Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors |
Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, FNU Atiquzzaman +8 more |
2023-09-26 |
| 11765909 |
Process integration flow for embedded memory enabled by decoupling processing of a memory area from a non-memory area |
Noriyuki Sato, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Sasikanth Manipatruni |
2023-09-19 |
| 11765908 |
Memory device fabrication through wafer bonding |
Mauricio Manfrini, Noriyuki Sato, James David Clarkson, Abel Fernandez, Somilkumar J. Rathi +4 more |
2023-09-19 |
| 11744081 |
Ferroelectric device film stacks with texturing layer which is part of a bottom electrode, and method of forming such |
Ramamoorthy Ramesh, Sasikanth Manipatruni, James David Clarkson, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde +1 more |
2023-08-29 |
| 11741428 |
Iterative monetization of process development of non-linear polar material and devices |
Sasikanth Manipatruni, Noriyuki Sato, Tanay Gosavi, Somilkumar J. Rathi, James David Clarkson +3 more |
2023-08-29 |
| 11716858 |
Ferroelectric device film stacks with texturing layer which is part of a bottom electrode and a barrier, and method of forming such |
Ramamoorthy Ramesh, Sasikanth Manipatruni, James David Clarkson, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde +1 more |
2023-08-01 |
| 11659714 |
Ferroelectric device film stacks with texturing layer, and method of forming such |
Ramamoorthy Ramesh, Sasikanth Manipatruni, James David Clarkson, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde +1 more |
2023-05-23 |
| 11587784 |
Smooth titanium nitride layers and methods of forming the same |
Sung Hoon Jung, Hee Seok Kim, Kyu Jin Choi, Moonsig Joo, Hae Young Kim +4 more |
2023-02-21 |
| 11586641 |
Method and mechanism for efficient re-distribution of in-memory columnar units in a clustered RDBMs on topology change |
Kartik Kulkarni, Tirthankar Lahiri, Vineet Marwah, Juan R. Loaiza |
2023-02-21 |
