Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Manganese or scandium doped multi-element non-linear polar material gain memory bit-cell

Manganese or scandium doped multi-element non-linear polar material gain memory bit-cell

US Patent 11810608 · Granted Nov 7, 2023

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Ferroelectrically modulated spin orbit logic device2025
Doped polar layers and semiconductor device incorporating same2025
Asynchronous carry-ripple adder with majority or minority gates2025
Asynchronous carry-ripple adder with majority or minority gates2025
Asynchronous carry-ripple adder with majority or minority gates2025
Subtractively patterned interconnect structures for integrated circuits2025
Differentially programmable magnetic tunnel junction device and system including2025
Perovskite-based magnetoelectric spin-orbit logic devices2025
Perovskite-based magnetoelectric spin-orbit logic devices2025
Integrating embedded memory with logic interconnects2025
Integrating embedded memory with logic interconnects2025
Integrating embedded memory with logic interconnects2025