Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12094923 | Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices | Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Zeying Ren, FNU Atiquzzaman +8 more | 2024-09-17 |
| 12034086 | Trench capacitors with continuous dielectric layer and methods of fabrication | Somilkumar J. Rathi, Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya +3 more | 2024-07-09 |
| 12029043 | Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications and methods of fabrication | Somilkumar J. Rathi, Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya +3 more | 2024-07-02 |
| 12022662 | Planar and trench capacitors for logic and memory applications and methods of fabrication | Somilkumar J. Rathi, Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya +3 more | 2024-06-25 |
| 12016185 | Planar and trench capacitors for logic and memory applications | Somilkumar J. Rathi, Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya +3 more | 2024-06-18 |
| 11996438 | Pocket flow for trench capacitors integrated with planar capacitors on a same substrate and method of fabrication | Somilkumar J. Rathi, Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya +3 more | 2024-05-28 |
| 11985832 | Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications | Somilkumar J. Rathi, Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya +3 more | 2024-05-14 |
| 11961877 | Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures | Somilkumar J. Rathi, Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya +3 more | 2024-04-16 |
| 11955512 | Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures and methods of fabrication | Somilkumar J. Rathi, Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya +3 more | 2024-04-09 |
| 11908704 | Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologies | Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Zeying Ren, FNU Atiquzzaman +8 more | 2024-02-20 |
| 11894417 | Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologies | Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Zeying Ren, FNU Atiquzzaman +8 more | 2024-02-06 |
| 11810608 | Manganese or scandium doped multi-element non-linear polar material gain memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Debo Olaosebikan, Amrita Mathuriya +1 more | 2023-11-07 |
| 11769790 | Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors | Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Zeying Ren, FNU Atiquzzaman +8 more | 2023-09-26 |
| 11605411 | Method of forming stacked ferroelectric planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Debo Olaosebikan, Amrita Mathuriya +1 more | 2023-03-14 |
| 11545204 | Non-linear polar material based memory bit-cell with multi-level storage by applying different voltage levels | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Debo Olaosebikan, Amrita Mathuriya +1 more | 2023-01-03 |
| 11532635 | High-density low voltage multi-element ferroelectric gain memory bit-cell with pillar capacitors | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-20 |
| 11532342 | Non-linear polar material based differential multi-memory element bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-20 |
| 11527277 | High-density low voltage ferroelectric memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-13 |
| 11527278 | Non-linear polar material based memory bit-cell with multi-level storage by applying different time pulse widths | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-13 |
| 11521666 | High-density low voltage multi-element ferroelectric gain memory bit-cell with planar capacitors | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-06 |
| 11521667 | Stacked ferroelectric planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-06 |
| 11514966 | Non-linear polar material based multi-memory element bit-cell with multi-level storage | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-11-29 |
| 11514967 | Non-linear polar material based differential multi-memory element gain bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-11-29 |
| 11501813 | Method of forming stacked ferroelectric non- planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-11-15 |
| 11423967 | Stacked ferroelectric non-planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-08-23 |