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Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices |
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| 12034086 |
Trench capacitors with continuous dielectric layer and methods of fabrication |
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| 12029043 |
Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications and methods of fabrication |
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Planar and trench capacitors for logic and memory applications and methods of fabrication |
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Planar and trench capacitors for logic and memory applications |
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Pocket flow for trench capacitors integrated with planar capacitors on a same substrate and method of fabrication |
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| 11985832 |
Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications |
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| 11961877 |
Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures |
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| 11955512 |
Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures and methods of fabrication |
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| 11908704 |
Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologies |
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| 11894417 |
Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologies |
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| 11810608 |
Manganese or scandium doped multi-element non-linear polar material gain memory bit-cell |
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| 11769790 |
Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors |
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| 11605411 |
Method of forming stacked ferroelectric planar capacitors in a memory bit-cell |
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| 11545204 |
Non-linear polar material based memory bit-cell with multi-level storage by applying different voltage levels |
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| 11532635 |
High-density low voltage multi-element ferroelectric gain memory bit-cell with pillar capacitors |
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| 11532342 |
Non-linear polar material based differential multi-memory element bit-cell |
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2022-12-20 |
| 11527277 |
High-density low voltage ferroelectric memory bit-cell |
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| 11527278 |
Non-linear polar material based memory bit-cell with multi-level storage by applying different time pulse widths |
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| 11521666 |
High-density low voltage multi-element ferroelectric gain memory bit-cell with planar capacitors |
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| 11521667 |
Stacked ferroelectric planar capacitors in a memory bit-cell |
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2022-12-06 |
| 11514966 |
Non-linear polar material based multi-memory element bit-cell with multi-level storage |
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| 11514967 |
Non-linear polar material based differential multi-memory element gain bit-cell |
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| 11501813 |
Method of forming stacked ferroelectric non- planar capacitors in a memory bit-cell |
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| 11423967 |
Stacked ferroelectric non-planar capacitors in a memory bit-cell |
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2022-08-23 |