Issued Patents 2023
Showing 26–44 of 44 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11696451 | Common mode compensation for non-linear polar material based 1T1C memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni | 2023-07-04 |
| 11683939 | Spin orbit memory devices with dual electrodes, and methods of fabrication | Benjamin Buford, Angeline Smith, Noriyuki Sato, Kaan Oguz, Christopher J. Wiegand +5 more | 2023-06-20 |
| 11665975 | Spin orbit coupling memory device with top spin orbit coupling electrode and selector | Chia-Ching Lin, Sasikanth Manipatruni, Ian A. Young | 2023-05-30 |
| 11646356 | Piezo-resistive transistor based resonator with anti-ferroelectric gate dielectric | Chia-Ching Lin, Raseong Kim, Ashish Verma Penumatcha, Uygar E. Avci, Ian A. Young | 2023-05-09 |
| 11646374 | Ferroelectric transistors to store multiple states of resistances for memory cells | Ashish Verma Penumatcha, Uygar E. Avci, Ian A. Young | 2023-05-09 |
| 11640984 | Transistor device with (anti)ferroelectric spacer structures | Jack T. Kavalieros, Ian A. Young, Matthew V. Metz, Uygar E. Avci, Chia-Ching Lin +5 more | 2023-05-02 |
| 11637191 | Piezo-resistive transistor based resonator with ferroelectric gate dielectric | Chia-Ching Lin, Raseong Kim, Ashish Verma Penumatcha, Uygar E. Avci, Ian A. Young | 2023-04-25 |
| 11626451 | Magnetic memory device with ruthenium diffusion barrier | Emily Walker, Carl Naylor, Kaan Oguz, Kevin Lin, Christopher J. Jezewski +6 more | 2023-04-11 |
| 11621391 | Antiferromagnet based spin orbit torque memory device | Chia-Ching Lin, Sasikanth Manipatruni, Dmitri E. Nikonov, Kaan Oguz, Ian A. Young | 2023-04-04 |
| 11605624 | Ferroelectric resonator | Chia-Ching Lin, Raseong Kim, Ashish Verma Penumatcha, Uygar E. Avci, Ian A. Young | 2023-03-14 |
| 11605411 | Method of forming stacked ferroelectric planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2023-03-14 |
| 11594624 | Transistor structures formed with 2DEG at complex oxide interfaces | Sasikanth Manipatruni, Dmitri E. Nikonov, Chia-Ching Lin, Uygar E. Avci, Ian A. Young | 2023-02-28 |
| 11594673 | Two terminal spin orbit memory devices and methods of fabrication | Noriyuki Sato, Angeline Smith, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien +8 more | 2023-02-28 |
| 11594270 | Perpendicular spin injection via spatial modulation of spin orbit coupling | Sasikanth Manipatruni, Chia-Ching Lin, Dmitri E. Nikonov, Christopher J. Wiegand, Ian A. Young | 2023-02-28 |
| 11575083 | Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory | Sasikanth Manipatruni, Kaan Oguz, Ian A. Young, Dmitri E. Nikonov, Chia-Ching Lin | 2023-02-07 |
| 11574666 | Spin orbit torque memory devices and methods of fabrication | Sasikanth Manipatruni, Chia-Ching Lin, Kaan Oguz, Ian A. Young | 2023-02-07 |
| 11557629 | Spin orbit memory devices with reduced magnetic moment and methods of fabrication | Kaan Oguz, Christopher J. Wiegand, Noriyuki Sato, Angeline Smith | 2023-01-17 |
| 11557717 | Transition metal dichalcogenide based spin orbit torque memory device with magnetic insulator | Chia-Ching Lin, Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young | 2023-01-17 |
| 11545204 | Non-linear polar material based memory bit-cell with multi-level storage by applying different voltage levels | Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2023-01-03 |