Issued Patents 2023
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11764786 | Magnetoelectric majority gate device | Nishtha Gaul, Andrew Marshall, Peter A. Dowben | 2023-09-19 |
| 11757449 | Magnetoelectric XNOR logic gate device | Nishtha Gaul, Andrew Marshall, Peter A. Dowben | 2023-09-12 |
| 11696514 | Transition metal dichalcogenide based magnetoelectric memory device | Chia-Ching Lin, Sasikanth Manipatruni, Tanay Gosavi, Benjamin Buford, Kaan Oguz +2 more | 2023-07-04 |
| 11658663 | Magnetoelectric inverter | Nishtha Gaul, Andrew Marshall, Peter A. Dowben | 2023-05-23 |
| 11651203 | Three-dimensional oscillator structure | Elijah V. Karpov, Ian A. Young | 2023-05-16 |
| 11626451 | Magnetic memory device with ruthenium diffusion barrier | Emily Walker, Carl Naylor, Kaan Oguz, Kevin Lin, Tanay Gosavi +6 more | 2023-04-11 |
| 11621391 | Antiferromagnet based spin orbit torque memory device | Chia-Ching Lin, Sasikanth Manipatruni, Tanay Gosavi, Kaan Oguz, Ian A. Young | 2023-04-04 |
| 11600659 | Cross-point magnetic random access memory with piezoelectric selector | Sasikanth Manipatruni, Ian A. Young | 2023-03-07 |
| 11594624 | Transistor structures formed with 2DEG at complex oxide interfaces | Sasikanth Manipatruni, Chia-Ching Lin, Tanay Gosavi, Uygar E. Avci, Ian A. Young | 2023-02-28 |
| 11594270 | Perpendicular spin injection via spatial modulation of spin orbit coupling | Tanay Gosavi, Sasikanth Manipatruni, Chia-Ching Lin, Christopher J. Wiegand, Ian A. Young | 2023-02-28 |
| 11575083 | Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory | Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Ian A. Young, Chia-Ching Lin | 2023-02-07 |
| 11557717 | Transition metal dichalcogenide based spin orbit torque memory device with magnetic insulator | Chia-Ching Lin, Tanay Gosavi, Sasikanth Manipatruni, Ian A. Young | 2023-01-17 |