| 11764786 |
Magnetoelectric majority gate device |
Nishtha Gaul, Andrew Marshall, Peter A. Dowben |
2023-09-19 |
| 11757449 |
Magnetoelectric XNOR logic gate device |
Nishtha Gaul, Andrew Marshall, Peter A. Dowben |
2023-09-12 |
| 11696514 |
Transition metal dichalcogenide based magnetoelectric memory device |
Chia-Ching Lin, Sasikanth Manipatruni, Tanay Gosavi, Benjamin Buford, Kaan Oguz +2 more |
2023-07-04 |
| 11658663 |
Magnetoelectric inverter |
Nishtha Gaul, Andrew Marshall, Peter A. Dowben |
2023-05-23 |
| 11651203 |
Three-dimensional oscillator structure |
Elijah V. Karpov, Ian A. Young |
2023-05-16 |
| 11626451 |
Magnetic memory device with ruthenium diffusion barrier |
Emily Walker, Carl Naylor, Kaan Oguz, Kevin Lin, Tanay Gosavi +6 more |
2023-04-11 |
| 11621391 |
Antiferromagnet based spin orbit torque memory device |
Chia-Ching Lin, Sasikanth Manipatruni, Tanay Gosavi, Kaan Oguz, Ian A. Young |
2023-04-04 |
| 11600659 |
Cross-point magnetic random access memory with piezoelectric selector |
Sasikanth Manipatruni, Ian A. Young |
2023-03-07 |
| 11594624 |
Transistor structures formed with 2DEG at complex oxide interfaces |
Sasikanth Manipatruni, Chia-Ching Lin, Tanay Gosavi, Uygar E. Avci, Ian A. Young |
2023-02-28 |
| 11594270 |
Perpendicular spin injection via spatial modulation of spin orbit coupling |
Tanay Gosavi, Sasikanth Manipatruni, Chia-Ching Lin, Christopher J. Wiegand, Ian A. Young |
2023-02-28 |
| 11575083 |
Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory |
Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Ian A. Young, Chia-Ching Lin |
2023-02-07 |
| 11557717 |
Transition metal dichalcogenide based spin orbit torque memory device with magnetic insulator |
Chia-Ching Lin, Tanay Gosavi, Sasikanth Manipatruni, Ian A. Young |
2023-01-17 |
