Issued Patents 2022
Showing 1–25 of 70 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538939 | Controlled bottom junctions | Brent A. Anderson, Ruilong Xie, Juntao Li | 2022-12-27 |
| 11538520 | Negative-capacitance ferroelectric transistor assisted resistive memory programming | — | 2022-12-27 |
| 11538720 | Stacked transistors with different channel widths | Lawrence A. Clevenger, Balasubramanian Pranatharthiharan, John H. Zhang | 2022-12-27 |
| 11527446 | Transistor having strain-inducing anchors and a strain-enhancing suspended channel | Juntao Li, Julien Frougier, Ruilong Xie | 2022-12-13 |
| 11527535 | Variable sheet forkFET device | Julien Frougier, Ruilong Xie, Chanro Park | 2022-12-13 |
| 11515401 | Vertical fin field effect transistor with a reduced gate-to-bottom source/drain parasitic capacitance | Chen Zhang, Xin Miao, Wenyu Xu | 2022-11-29 |
| 11515430 | Tilted nanowire transistor | Pouya Hashemi, Alexander Reznicek, Karthik Balakrishnan | 2022-11-29 |
| 11502202 | Transistors with uniform source/drain epitaxy | Ruilong Xie, Chun-Chen Yeh, Tenko Yamashita | 2022-11-15 |
| 11495688 | Source and drain epitaxy and isolation for gate structures | Juntao Li, Peng Xu, Zhenxing Bi | 2022-11-08 |
| 11495673 | Vertical fin field effect transistor with a reduced gate-to-bottom source/drain parasitic capacitance | Chen Zhang, Xin Miao, Wenyu Xu | 2022-11-08 |
| 11489044 | Nanosheet transistor bottom isolation | Zhenxing Bi, Yi Song, Lijuan Zou | 2022-11-01 |
| 11482612 | Vertical transistor having bottom spacers on source/drain regions with different heights along junction region | Shogo Mochizuki, Juntao Li, Choonghyun Lee | 2022-10-25 |
| 11482617 | Vertical transport field-effect transistor including replacement gate | Ruilong Xie, Chen Zhang, Julien Frougier | 2022-10-25 |
| 11476362 | Vertical transistors with various gate lengths | Juntao Li, Choonghyun Lee, Shogo Mochizuki | 2022-10-18 |
| 11462631 | Sublithography gate cut physical unclonable function | Eric R. Miller, Fee Li Lie, Gauri Karve, Marc A. Bergendahl, John R. Sporre | 2022-10-04 |
| 11456181 | Cross-bar fin formation | Chanro Park, Ruilong Xie, Juntao Li | 2022-09-27 |
| 11456354 | Bulk nanosheet with dielectric isolation | Bruce B. Doris, Junli Wang | 2022-09-27 |
| 11453911 | DNA sequencing with stacked nanopores | Zhenxing Bi, Juntao Li, Xin Miao | 2022-09-27 |
| 11444083 | Fabrication of fin field effect transistors utilizing different fin channel materials while maintaining consistent fin widths | Juntao Li, Peng Xu | 2022-09-13 |
| 11437489 | Techniques for forming replacement metal gate for VFET | Ruilong Xie, Heng Wu, Chanro Park | 2022-09-06 |
| 11430879 | Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy | Juntao Li | 2022-08-30 |
| 11430651 | Nanosheet transistors with sharp junctions | Lawrence A. Clevenger, Balasubramanian S. Pranatharthi Haran, John H. Zhang | 2022-08-30 |
| 11430864 | VFET device with controllable top spacer | Wenyu Xu, Chen Zhang, Xin Miao | 2022-08-30 |
| 11424343 | Vertical fin field effect transistor devices with self-aligned source and drain junctions | Juntao Li, Choonghyun Lee, Shogo Mochizuki | 2022-08-23 |
| 11398347 | Inductor with ferromagnetic cores | Juntao Li, Geng Wang, Qintao Zhang | 2022-07-26 |